The concept of electrostatic doping and related devices

Cristoloveanu, S.; Lee, Kyung Hwa; Park, Hyung-Jin; Parihar, Mukta Singh

doi:10.1016/j.sse.2019.03.017

Cited by 49 publications

(42 citation statements)

References 57 publications

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“…One potential solution to doping problem in thin-film poly-GaN films for device applications could be the electrostatic doping (ED) [17,[45][46][47][48] approach where charge carriers are induced in the ultra-thin body semiconductor by using a suitable metal work function or by applying a gate bias. ED has already been demonstrated in various material systems and device geometries where conventional doping is otherwise challenging, as discussed in the next chapter.…”

Section: Role Of Electrostatic Doping (Ed)mentioning

confidence: 99%

“…Note that earlier modeling work on I-V curves of asymmetric dual-gate (DG) devices [99] could be used to derive a model for bias-induced ED including traps. The simultaneous induction of p-type and n-type charged regions in a semiconductor body via an applied field can be realized using a dual (or multiple) gate structure [48]. By biasing two gates with opposite polarities, electrons and holes can be simultaneously induced in a semiconductor Figure 2.10: Schematic cross section of the CNT p-n diode [74].…”

Section: Bias-induced Edmentioning

confidence: 99%

“…Recently, the concept of bias-induced ED was also experimentally applied in an advanced and mature FD-SOI process to demonstrate the reconfigurable device [68] which can be configured into nine types of devices with different functionalities such as virtual diodes, TFETs, p-i-n diodes and band-modulation FETs. For more detailed overview on this and related work, please refer to [48].…”

Section: Lateral P-n Junctionmentioning

confidence: 99%

“…In this direction, various electrostatic doping (ED) approaches has been reported in recent years where charge carriers are induced in UTB semiconductors using a suitable metal work function or applied local gate bias. These approaches include devices such as Schottky barrier (SB) metal-oxide-semiconductor fieldeffect transistors (MOSFETs) [58,59], charge plasma based ultra-thin body (UTB) devices [60][61][62][63], reconfigurable FETs based on silicon (Si) nanowires [64][65][66], fully-depleted silicon-on-insulator (FD-SOI) devices [48,[67][68][69], FETs based on graphene [70][71][72][73], CNT [74][75][76] and 2-D materials [77,78], electron-hole bilayer based TFETs [79][80][81] and light-emitting devices [82]. ED potentially offers ultra-sharp junctions with a well controlled carrier concentration profile and a reduced defect density.…”

Section: Introductionmentioning

confidence: 99%

“…Section 2.4 summarizes our findings. For more detailed overview on ED based innovative FD-SOI devices, please refer to [48]. Further, for a more technology focused review on ED based TFETs and reconfigurable FETs refer to [47].…”

Section: Introductionmentioning

confidence: 99%

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Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

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Section: Role Of Electrostatic Doping (Ed)mentioning

confidence: 99%

Section: Bias-induced Edmentioning

confidence: 99%

Section: Lateral P-n Junctionmentioning

confidence: 99%

Section: Introductionmentioning

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Section: Introductionmentioning

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Optoelectronic Properties of MoS₂ in Proximity to Carrier Selective Metal Oxides

Lattyak

Vehse

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et al. 2022

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stacking nature, [5] strain, [6] and applied voltages. [7] Properties such as natural surface passivation, [8] high carrier mobility, [9] semiconducting band gaps, [1a] valley polarization, [10] strong light-mater interactions, [3,11] and the transitions from an indirect band gap in bulk form to a direct band gap in monolayer form [3,12] make them noteworthy materials to study. TMDCs such as molybdenum disulfide (MoS 2 ) have proven to be photoactive [13] and have been investigated as potential absorber layers in solar cells. [14] Many proof-of-concept devices have been constructed in the past few years, the majority of them based on exfoliated TMDC flakes. [13b,15] Exfoliation approaches are limited to the preparation of micrometer-scale devices and are challenging to scale to larger length scales. Even though there have been a few instances of larger scale TMDC solar cells. [16] In most of these cases, bulk MoS 2 or TMDC materials were used with layer thickness exceeding 100 nm. Therefore, these approaches could not benefit from the intrinsic properties of mono-and few-layer MoS 2 , such as an increased band gap [12] and high absorption coefficient in thin layers, [13b] and do not exploit the potential for transparent and semi-transparent photovoltaic applications. [17] In order to take advantage of the unique mono-and few layer properties of MoS 2 as absorption layers in solar cells, the TMDC films need to be integrated in a device stack that can separate and extract charge carriers from the TMDC light absorbing layer. Charge separation can be realized with carrierselective contact materials, such as titanium oxide (TiO x ) acting as an electron selective contact [18] and molybdenum oxide (MoO x ) acting as a hole selective contact. [19] Where these selective contacts help separate the generated charge carriers due to different work functions of the contact material. [20] TiO x and MoO x have already been reported to form type II heterostructures with MoS 2 allowing for charge separation. [21] One aim of this paper is to investigate the influence of the adjacent TiO x and MoO x contacts on the optoelectronic properties of monoand few layer exfoliated MoS 2 flakes, different from a similar study by Xu et al., [22] that also explores the relationship between MoS 2 and carrier selective contacts. The MoS 2 absorber layers, in our study are transferred onto the contact materials in order to avoid possible damage of the ultrathin absorber during contact deposition, instead of being sandwiched between silicon dioxide (SiO 2 ) and metal oxides. As 2D materials are sensitive Transition metal dichalcogenides are an exciting class of new absorber materials for photovoltaic applications due to their unique optoelectronic properties in the single to few-layer regime. In recent years, these materials have been intensively studied, often utilizing conventional substrates such as sapphire and silicon dioxide on silicon. This study investigates the optical properties of molybdenum disulfide (MoS 2 ) mono-, bi-, and mul...

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The concept of electrostatic doping and related devices

Cited by 49 publications

References 57 publications

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

The SOI Transistor

Optoelectronic Properties of MoS₂ in Proximity to Carrier Selective Metal Oxides

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The concept of electrostatic doping and related devices

Cited by 49 publications

References 57 publications

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

The SOI Transistor

Optoelectronic Properties of MoS2 in Proximity to Carrier Selective Metal Oxides

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Optoelectronic Properties of MoS₂ in Proximity to Carrier Selective Metal Oxides