The composition dependence of the optical band gap in Ge–Se–In thin films

Saffarini, G.; Saiter, Jean‐Marc; Schmitt, H.

doi:10.1016/j.optmat.2006.05.003

Cited by 80 publications

(31 citation statements)

References 53 publications

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“…They are considered as typical glasses for infrared applications [3,4] and provide good candidates for photo-structural optical recording [5], acousto-optic devices [6,7] and advanced IR optical fibers [8]. They also provide solid-state physicists with new solutions for the challenging fundamental problems that relate to the possible technological applications for these glasses [7,9].…”

Section: Introductionmentioning

confidence: 99%

Analysis of chemical ordering and fragility for Ge–Se–In glasses

et al. 2015

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Decreasing the band gap of a material due to metal impurities has been approved through several studies, and this subject is considered as a major area of interest within the optoelectronic applications. Indium-based chalcogenides have been considered good candidates in nonlinear optics due to their ability to transmit in the infrared region. Hence, Ge 18 Se 82 has been alloyed with In. The nature of the chemical ordering of amorphous samples of Ge 18 Se 82-x In x (x = 0, 2, 4 and 6) have been systematically studied. The aim of present investigation is to understand the role of chemical composition and meancoordination number in determining their structural and physical properties. The compactness, d, of alloyed samples has been calculated from their measured densities, and values obtained have been interpreted using the topological model proposed to describe the atomic arrangements in these alloys. The variation of the glass transition temperature, T g , with the average coordination number, Z, has been investigated. The compositional dependence of the mean atomic volume, V m , has also been determined. The free volume percentage, FVP, in Ge 18 Se 82-x In x amorphous samples and their fragility indices, m, have been determined to examine the relationship with the mean-coordination number. We have also analyzed the obtained results on the basis of average single bond energy and electronegativity.

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Section: Introductionmentioning

confidence: 99%

Analysis of chemical ordering and fragility for Ge–Se–In glasses

et al. 2015

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“…Two properties regarding the amorphous Ge-Se matrix are of particular importance in applications: the material's optical band gap [1,6] (for example, Ge-Se vibrational spectroscopy [7] has revealed the instrumental role of the system's band gap on the electrical properties of Ge-Se based semiconductors) and the effect of alloying additions in the Ge-Se matrix. Typically, the introduction of Bi or Pb in a Ge-Se glass induces a change in the electrical conductivity from p-to n-type, accompanied by a reduction of the electrical resistance [8].…”

Section: Open Accessmentioning

confidence: 99%

“…Original interest in the Ge-Se matrix stems from its popularity in the synthesis of semiconducting materials and, in turn, investigation of electron transport in disordered Ge-Se systems is actively pursued [1,2]. The addition of a third component in Ge-Se-based glasses has raised interest regarding the system's structure [3,4] in applications such as amorphous chalcogenide membranes and ion selective…”

Section: Introductionmentioning

confidence: 99%

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Antipas

Mangiorou

Hristoforou

2015

Metals

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Abstract:The atomic environments of two chalcogenide glasses, with compositions GeSe4In10 and GeSe4In15, were studied via Reverse Monte Carlo and Density Functional Theory. Indium content demoted Ge-Se bonding in favor of Se-In while the contribution of Se-Se in the first coordination shell order was faint. Upon transition to the richer In glass, there was formation of rich Ge-centered clusters at radial distances further than 4 Å from the RMC box center, which was taken to signify a reduction of Ge-Se interactions. Cluster coordination by Se promoted stability while, very conclusively, In coordination lowered cluster stability by intervening in the Ge-Se and Se-Se networks.

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“…In homogeneous materials, the valence band originates from lone-pair (LP) electron states whereas the conduction band arises from antibonding states [21,22] . As M Kastner had reported [22] , an increase in the bond strengths causes a larger splitting between conduction band and the valence band which leads to an increase of energy band gap E g .…”

Section: Infrared Datamentioning

confidence: 99%

“…The increase of density which is identically equal to network connectedness [21] can lead to an increasing interaction between the atomic species, which in turn can widen the seperation between the conduction band and the valence band. The densities of 60Bi 2 O 3 -(40-x)B 2 O 3 -xBaO glasses with 5 mol%≤x≤20 mol% were measured and listed in Table 2.…”

Section: Infrared Datamentioning

confidence: 99%

Glass formation and optical band gap studies on Bi2O3-B2O3-BaO ternary system

Chen

Dai

Nie

et al. 2009

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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The glass forming region of Bi 2 O 3 -B 2 O 3 -BaO ternary system was investigated. A serial of glass samples with high Bi 2 O 3 content in Bi 2 O 3 -B 2 O 3 -BaO system were prepared by using conventional melting and quenching meld, and the refractive indexes and absorption spectra of samples were measured. It is found that the refractive index of samples as well as the UV absorption increase with the increase of BaO content. According to the Tauc law, optical band gap E opg which is assumed to be the effective energy band gap E g is calculated and decreases with the increasing BaO content, and the ratio of E g /E opg is 1.3.

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The composition dependence of the optical band gap in Ge–Se–In thin films

Cited by 80 publications

References 53 publications

Analysis of chemical ordering and fragility for Ge–Se–In glasses

Analysis of chemical ordering and fragility for Ge–Se–In glasses

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Glass formation and optical band gap studies on Bi2O3-B2O3-BaO ternary system

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