The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation

Chen, Lei; Lee, JinWoo; Shafarman, W. N.

doi:10.1109/jphotov.2013.2280471

Cited by 63 publications

(52 citation statements)

References 12 publications

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“…ACIGS films were deposited using a three-stage coevaporation process with Ag evaporated concurrently with Cu in the second stage [2]. The baseline films in this work have (Ag+Cu)/(In+Ga) ≈ 0.85, controlled by detecting the emissivity change during transition from group I-rich to group I-poor composition [5].…”

Section: Methodsmentioning

confidence: 99%

“…The baseline films in this work have (Ag+Cu)/(In+Ga) ≈ 0.85, controlled by detecting the emissivity change during transition from group I-rich to group I-poor composition [5]. Details about the deposition and device fabrication were published previously [2].…”

Section: Methodsmentioning

confidence: 99%

“…The position of that stoichiometry point with respect to the front surface of the film after the third stage could then be determined. Once the ACIGS film reaches stoichiometry in the second stage, the incoming Ag and Cu form a Ag-Cu-Se layer on top [2]. During the third stage of the process the Ga and In also react incongruently resulting in a higher Ga concentration at the front surface and the minimum in Ga below the surface.…”

Section: B Three Stage Growth and Variation In Minimum E G Positionmentioning

confidence: 99%

“…The gallium gradients are induced using a three stage deposition process [1] and previously reported for (AgCu)(InGa)Se2 deposition [2].…”

Section: Introductionmentioning

confidence: 99%

“…Silver alloying with CIGS solar cells has several effects: reducing the alloy melt temperature; widening it's bandgap; reducing sub-bandgap disorder, and potentially providing a pathway for wide bandgap solar cells with high efficiency [2], [3], [4]. We previously showed that the addition of Ag changes the composition and bandgap gradients that result from this process [1].…”

Section: Introductionmentioning

confidence: 99%

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Bandgap gradients in (Ag,Cu)(In,Ga)Se2 thin film solar cells deposited by three-stage co-evaporation

Thompson

Chen

Shafarman

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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Ag,Cu)(In,Ga)Se 2 (ACIGS) solar cells are optimized at bandgaps greater than 1.2 eV by varying composition profile of the absorber layer using a three-stage evaporation process. Numerical modeling and cumulative process data provides insight into the process. Silver alloying CIGS changes the optimized bandgap profile by reducing carrier concentration, and reducing bandgap gradients. The minimum bandgap position is controlled by the point when the film reaches I/III stoichiometry during the second stage of the three-stage process. We achieved a 19.9% efficient solar cell with V OC = 732 mV at a bandgap of 1.2 eV based on quantum efficiency.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: B Three Stage Growth and Variation In Minimum E G Positionmentioning

confidence: 99%

“…The gallium gradients are induced using a three stage deposition process [1] and previously reported for (AgCu)(InGa)Se2 deposition [2].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Bandgap gradients in (Ag,Cu)(In,Ga)Se2 thin film solar cells deposited by three-stage co-evaporation

Thompson

Chen

Shafarman

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

Gong

Qiu

Niu

et al. 2021

Adv Funct Materials

134

132

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The large open‐circuit voltage deficit (Voc,def) is the key issue that limits kesterite (Cu2ZnSn(S,Se)4, [CZTSSe]) solar cell performance. Substitution of Cu+ by larger ionic Ag+ ((Ag,Cu)2ZnSn(S,Se)4, [ACZTSSe]) is one strategy to reduce Cu–Zn disorder and improve kesterite Voc. However, the so far reported ACZTSSe solar cell has not demonstrated lower Voc,def than the world record device, indicating that some intrinsic defect properties cannot be mitigated using current approaches. Here, incorporation of Ag into kesterite through a dimethyl sulfoxide (DMSO) solution that can facilitate direct phase transformation grain growth and produce a uniform and less defective kesterite absorber is reported. The same coordination chemistry of Ag+ and Cu+ in the DMSO solution results in the same reaction path of ACZTSSe to CZTSSe, resulting in significant suppression of CuZn defects, its defect cluster [2CuZn + SnZn], and deep level defect CuSn. A champion device with an efficiency of 12.5% (active area efficiency 13.5% without antireflection coating) and a record low Voc,def (64.2% Shockley–Queisser limit) is achieved from ACZTSSe with 5% Ag content.

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Charge Carrier Lifetime Fluctuations and Performance Evaluation of Cu(In,Ga)Se₂ Absorbers via Time‐Resolved‐Photoluminescence Microscopy

Ochoa

Yang

Nishiwaki

et al. 2021

Advanced Energy Materials

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The open‐circuit voltage (VOC) is the main limitation to higher efficiencies of Cu(In,Ga)Se2 solar cells. One of the most critical parameters directly affecting VOC is the charge carrier lifetime. Therefore, it is essential to evaluate the extent to which inhomogeneities in material properties limit the carrier lifetime and how postdeposition treatments (PDTs) and growth conditions affect material properties. Time‐resolved photoluminescence (TRPL) microscopy is employed at conditions similar to one sun to study carrier lifetime fluctuations in Cu(In,Ga)Se2 with light (Na) and heavy (Rb) alkalis, different substrates, and grown at different temperatures. PDT lowers the amplitude of minority carrier lifetime fluctuations, especially for Rb‐treated samples. Upon PDT, the grains’ carrier lifetime increases, and the analysis suggests a reduction in grain boundary recombination. Furthermore, lifetime fluctuations have a small impact on device performance, whereas VOC calculated from TRPL (and continuous‐wave PL) agrees with device values within the limits of investigated PDT samples. Finally, up to about half a per cent external radiative efficiencies are experimentally determined from TRPL metrics, and internal radiative efficiencies are approximated. The findings demonstrate that the highest absorber material quality investigated is still limited by nonradiative recombination (grain or grain boundary) and is comparable to state‐of‐the‐art absorbers.

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The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation

Cited by 63 publications

References 12 publications

Bandgap gradients in (Ag,Cu)(In,Ga)Se2 thin film solar cells deposited by three-stage co-evaporation

Bandgap gradients in (Ag,Cu)(In,Ga)Se2 thin film solar cells deposited by three-stage co-evaporation

Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

Charge Carrier Lifetime Fluctuations and Performance Evaluation of Cu(In,Ga)Se₂ Absorbers via Time‐Resolved‐Photoluminescence Microscopy

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The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation

Cited by 63 publications

References 12 publications

Bandgap gradients in (Ag,Cu)(In,Ga)Se2 thin film solar cells deposited by three-stage co-evaporation

Bandgap gradients in (Ag,Cu)(In,Ga)Se2 thin film solar cells deposited by three-stage co-evaporation

Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

Charge Carrier Lifetime Fluctuations and Performance Evaluation of Cu(In,Ga)Se2 Absorbers via Time‐Resolved‐Photoluminescence Microscopy

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Product

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Charge Carrier Lifetime Fluctuations and Performance Evaluation of Cu(In,Ga)Se₂ Absorbers via Time‐Resolved‐Photoluminescence Microscopy