The coexistence of threshold and memory switching characteristics of ALD HfO₂ memristor synaptic arrays for energy-efficient neuromorphic computing

Abstract

<p>Coexistence of threshold and memory switching characteristics of ALD HfO₂ memristor synaptic arrays for energy-efficient neuromorphic computing.</p>

Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor

“…[ 35 ] Moreover, a number of studies have been conducted which confirmed the formation of conducting filaments as well as electrochemically active metal ions migration in various switching materials including h ‐BN. [ 6,13,27,36 ]…”

A dual-functional Ta/TaOx/Ru device with both nonlinear selector and resistive switching behaviors

“…12 Moreover, sneak path issue is a severe challenge caused by the leakage current from undesignated cells in an array, which causes a limitation of array size and read/write errors. To overcome the sneak path issue, selection devices (selector) such as diode, 13 threshold switching device, [14][15][16][17][18][19][20] tunnelling device [21][22][23][24] are proposed in series with the memristor device for conguring a one selector one resistor (1S1R) architecture. Ta/TaO x is a widely accepted material system for resistive switching devices.…”

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

“…5 In CBRAM, metal ions originated from the top electrode diffuses into the switching layer and form a metallic bridge which serves as a conduction path of electrons. 6,7,8 On the other hand, the conduction path in OxRAM is attributed to the formation of oxygen vacancy conducting filament. 9 Nevertheless, the formation of a hybrid conducting bridge consisting of metal atoms and oxygen vacancies was also reported.…”