The CMS Tracker for the High Luminosity LHC

Rossi, Alessandro

doi:10.1016/j.nima.2022.167950

Cited by 2 publications

(1 citation statement)

References 12 publications

(12 reference statements)

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“…The state-of-the-art pixel readout chips in the HEP community are being developed by the CERN RD53 Collaboration [1], and are focused on the planned upgrades (called phase-II upgrades) of the CMS and ATLAS experiments at the Large Hadron Collider (LHC) [2,3]. The RD53 chips are fabricated in a 65 nm CMOS technology and expected to survive a Total Ionizing Dose (TID) of about 1 Grad (SiO 2 ), accumulated in around 10 years of operation, while being able to deal with particle hit rates of the order of 3 GHz/cm 2 . Three different analog front-end designs have been developed in the framework of RD53 [4].…”

Section: Introductionmentioning

confidence: 99%

A Charge Sensitive Amplifier in a 28 nm CMOS Technology for Pixel Detectors at Future Particle Colliders

2023

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This paper is concerned with the design of a Charge Sensitive Amplifier (CSA) in a 28 nm CMOS technology. The CSA discussed in this work is conceived for High Energy Physics (HEP) experiments at next-generation colliders, where pixel detectors will be read out by specific front-end chips, typically including a CSA exploited for charge-to-voltage conversion of the signal delivered by the sensor. The main analog performance parameters of the CSA, also referred to as the pre-amplifier, are assessed here by means of specific Spectre simulations, which are meant to evaluate the behavior of the analog processor in terms of noise, linearity and capability to compensate for very large detector leakage currents. Noise simulations revealed an equivalent noise charge close to 75 electrons rms for typical operating conditions. Up to 50 nA sensor leakage current can be compensated for thanks to the CSA Keummenacher feedback network. The total current consumption of the CSA is close to 2.2 µA, which, together with a power supply of 0.9 V, translates to a power consumption of 2.0 µW.

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