The chemistry of the compound semiconductor-intrinsic insulator interface

Structural analysis of HgCdTe and PbSnTe native oxide films

“…Table 2 contains also the measured [9,10] as well as XPS and AES results for HgCdTe and PbSnTe anodic oxides. [3,4] The experiments with chemical oxides provided the most interesting results. XPS and AES data for PbTe demonstrated that elements in both anodic and chemical oxides have been oxidized, [11] but the chemical shifts are too small to allow differentiating PbTeO 3 and TeO 2 .…”

“…Some of interplane distances are close to the reference values for the CdTeO 3 oxide, while the d hkl of the first ring is close to the corresponding value for CdTe. The ring with d hkl = 2.174 (Table 1) may be associated with both TeO 2 oxide and HgTeO 3 .…”

“…The factor d is related to (h k l) indices of the planes and the dimension of the unit cells. Table 1 compares experimental data for HgCdTe anodic oxide with the reference data [8] for CdTeO 3 and CdTe. The simple relations for interplane distances d hkl of first rings indicate the cubic elementary structure of the material.…”

“…Anodic oxides were fabricated under standard conditions, [1,3] at constant current density up to predetermined voltage. Chemical oxides of Pb 1−x Sn x Te were grown in H 2 O 2 -KOH solution.…”

“…[1,2] This can be fully applied to another narrow-gap semiconductor -PbSnTe as well. [3] Currently used technologies can be categorized as deposited dielectrics and methods based on native layers formed when the growing layer incorporates the semiconductor atoms. It is by now well established that the native films of semiconductors are indispensable for appropriately terminating the lattice and for creating the minimum perturbation to the crystal lattice of the surface.…”