The chemistry of processes which create dielectric layers with functional group substituents on semiconductors by impurity thermo-oxidation

Mittova, I. Ya.; Pshestanchik, V. R.

doi:10.1070/rc1991v060n09abeh001122

Cited by 4 publications

(2 citation statements)

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“…These components can occur in the form of compounds with the deposited metals (the presence of the MeAs compounds at the inner Me/GaAs interface according to the X-ray diffraction and IR spectroscopic data). In the general case, the stage of these interactions is the controlling stage for oxidation processes in complex semiconductors of the A II B V types with the participation of different activators [47]. A comparison of the processes under investigation with the oxidation of the gallium arsenide itself demonstrates that gallium has a higher oxidizing ability than arsenic and the following reactions proceed in the system:…”

Section: Physicochemical Features Of the Interactions Between Metal Nmentioning

confidence: 99%

Thermal oxidation of gallium arsenide with transition metal nanolayers on the surface

2008

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The physicochemical features of the interaction between nanofilms of iron triad metals and the gallium arsenide surface during thermal oxidation are analyzed. The role of oxides formed upon oxidation of iron, cobalt, and nickel metal films in the course of thermal oxidation of gallium arsenide is demonstrated, and the influence of the metal deposition method on the kinetics of oxidation, the composition, and the properties of the prepared samples is determined. Schemes are proposed for the development of the oxidation processes under investigation with due regard for the chemical specific features of the iron triad metals and their compounds.

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Section: Physicochemical Features Of the Interactions Between Metal Nmentioning

confidence: 99%

Thermal oxidation of gallium arsenide with transition metal nanolayers on the surface

2008

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“…As it is practically impossible to use the higher oxide Mn 2 O 7 for the experiment due to its extremely fast decomposition, the study is based on compositions of MnO 2 with p-block oxides (PbO) and d-block oxides (V 2 O 5 ). The individual chemostimulating effects of these oxides have already been studied [6,7].…”

Section: Introductionmentioning

confidence: 99%

Chemostimulating effect of mixture and separate evaporation of manganese (IV) oxide compositions with lead (II) oxide and vanadium (V) oxide on GaAs thermal oxidation

Mittova¹,

Kostryukov²

2015

Nanosist.: fiz. him. mat.

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The effects of variable compositions of manganese (IV) oxide -lead (II) oxide and manganese (IV) oxidevanadium (V) oxide on the GaAs thermal oxidation process have been studied. The spatial separation of the oxides in MnO 2 + PbO and MnO 2 + V 2 O 5 binary compositions activating the thermal oxidation of GaAs has made it possible to locate the interactions between these oxides that are responsible for the non-linear effects observed in their coaction. Solid-phase interactions enhance the chemostimulating activities of both oxides (a positive nonlinear effect takes place). Gas-phase interactions cause a marked negative deviation from the additive chemical stimulation effect.

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Nanostructures Obtained Using Electric Discharges at Atmospheric Pressure

Topală

Ojegov

Ursaki

2016

Nanostructures and Thin Films for Multifunctional Applications

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The chemistry of processes which create dielectric layers with functional group substituents on semiconductors by impurity thermo-oxidation

Cited by 4 publications

References 0 publications

Thermal oxidation of gallium arsenide with transition metal nanolayers on the surface

Thermal oxidation of gallium arsenide with transition metal nanolayers on the surface

Chemostimulating effect of mixture and separate evaporation of manganese (IV) oxide compositions with lead (II) oxide and vanadium (V) oxide on GaAs thermal oxidation

Nanostructures Obtained Using Electric Discharges at Atmospheric Pressure

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