2012
DOI: 10.1016/j.mseb.2012.04.026
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The charge-transfer property and the performance of dye-sensitized solar cells of nitrogen doped zinc oxide

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Cited by 10 publications
(4 citation statements)
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“…Figure 3 shows the variation of core-level XPS spectra of Zn 2p 3/2 and O 1s for the ZnO surfaces. [27] The middle peak (%531.1 eV) is usually attributed to the presence of loosely [28] including surface hydroxyl groups. [25] When the surface was treated with dye, the intensity of the Zn 2p 3/2 peak considerably decreased and the maximum peak position shifted toward a lower binding energy by about 0.1 eV, implying that Zn atoms were less exposed to the surface and bound to more surrounding O atoms.…”
Section: Resultsmentioning
confidence: 99%
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“…Figure 3 shows the variation of core-level XPS spectra of Zn 2p 3/2 and O 1s for the ZnO surfaces. [27] The middle peak (%531.1 eV) is usually attributed to the presence of loosely [28] including surface hydroxyl groups. [25] When the surface was treated with dye, the intensity of the Zn 2p 3/2 peak considerably decreased and the maximum peak position shifted toward a lower binding energy by about 0.1 eV, implying that Zn atoms were less exposed to the surface and bound to more surrounding O atoms.…”
Section: Resultsmentioning
confidence: 99%
“…The peak with the lowest binding energy ( % 530.1 eV) is generally assigned to O 2À ions surrounded by Zn atoms of ZnO crystals with a normal Wurzite structure, that is, bulk-phase oxygen. [27] The middle peak (%531.1 eV) is usually attributed to the presence of loosely [28] including surface hydroxyl groups. [27] The peak with the highest binding energy ( % 532.1 eV) is associated with O 2À ions in the oxygen vacant sites of the ZnO matrix.…”
Section: Resultsmentioning
confidence: 99%
“…The performance improvement was also attributed to the combined effects of increase of charge carrier concentration and increase in Fermi energy level of nanorods after N doping. Zhang et al reported the fabrication of N‐doped ZnO using two methods, namely annealing and solution methods . N‐doped ZnO synthesized by using solution method ( η = 2.64%) showed better performance compared with annealing method ( η = 1.10%).…”
Section: Photo‐anodementioning
confidence: 99%
“…This peak BE is consistent with N bound to H. The second peak in NT1 sample, at higher BE, is due to accumulation of positive charge during the photoelectron ejection, as will be explained below, since the same effect is observed for Zn 2p and O 1s regions in this sample. The selected N source of ammonium acetate introduces NH 3 in the precursor solution [15,[39][40][41], which may induce the N H chemical bond in ZnO:N films prepared by SPT. Substrate temperature has a substantial role on the active N incorporation in the ZnO.…”
Section: Surface Chemical Compositionmentioning
confidence: 99%