The characterization of synthetic and natural single crystal diamonds by X-ray diffraction

Maeta, Hiroshi; Matsumoto, Namiko; Haruna, Katsuji; Saotome, T.; Ono, F.; Sugai, H.; Ohtsuka, H.; Ohashi, Kazutoshi

doi:10.1016/j.physb.2005.12.073

Cited by 3 publications

(7 citation statements)

References 7 publications

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“…The lattice parameter of boron-doped diamond (IIb) is larger than that of high purity diamond (IIa) and that of irradiated synthetic diamond (Ib) is also larger than that of unirradiated one. These results suggest that the boron atoms in IIb [4] and the interstitial atoms in irradiated Ib precipitate on the (1 0 0) plane and expand the lattice planes.…”

Section: Resultsmentioning

confidence: 86%

“…The lattice prameter (0.35667 nm) for Ib increased linearly with ion fluence and attained to 0.35671 nm. We have already reported the measurements of lattice parameter for the four types of diamond crystals, which show the order of lattice parameters as follows, IIa > Ib > IIa > Ia [3,4]. The results show that the lattice parameter is smallest for natural diamond (Ia, 0.35665-0.35667 nm) and largest for borondoped diamond (IIb, 0.35670).…”

Section: Resultsmentioning

confidence: 89%

“…The results show that the lattice parameter is smallest for natural diamond (Ia, 0.35665-0.35667 nm) and largest for borondoped diamond (IIb, 0.35670). It is noted [4] that in the synthetic diamond (Ib) in which the nitrogen atoms are isolated at the substitutional sites the lattice parameter is slightly larger than that of the pure diamond (IIa). On the other hand, nitrogen atoms in the natural diamond form platelets on (1 0 0) planes in which nitrogen atoms are located close to each other or make pairs and agglomerations at the substitutional sites, not at the interstitial sites.…”

Section: Resultsmentioning

confidence: 99%

“…The results are compared with those for high purity synthetic diamond of single crystal (IIa) and boron-doped single crystal diamond (IIb) already reported by us [2][3][4].…”

mentioning

confidence: 81%

“…Thus, the synthetic semiconductor diamond is potentially one of the best materials for electronic devices in severe environments like high temperature and radiation. We have studied the electrical transport properties of boron-doped synthetic semiconductor diamond of single crystal [1] and characterized natural and synthetic single crystal diamonds by measurements of the Xray integrated scattering intensity, lattice parameter and diffuse scattering [2][3][4].Diamond usually contains nitrogen to some extent, and is divided into two classes [5]. One contains nitrogen atoms (type Ia and Ib) , the other less nitrogen atoms (type IIa and IIb).…”

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confidence: 99%

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X‐ray diffuse scattering from carbon‐ion‐irradiated diamond

Sugai

Maeta

Matsumoto

et al. 2007

Phys. Status Solidi (c)

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Synthetic single crystal diamonds are irradiated with 100 MeV carbon-ion and characterized by measurements of the X-ray lattice parameter and diffuse scattering (XDS) at room temperature. The lattice parameter increases with the ion fluence. The intensity of XDS diffuses asymmetrically to form a streak along the [-1 0 0] direction parallel to the reciprocal lattice vector. These results suggest that interstitial atoms induced by irradiation aggregate to form dislocation loop on the (1 0 0) plane in the synthetic single crystal diamonds. The results are similar to the XDS of boron-doped single crystal diamond suggesting that boron atoms are likely to form precipitates on the (1 0 0) plane.1 Introduction Today, the development of high-pressure synthesis technique allows to grow large single crystal diamond and also boron-doped semiconductor diamond of single crystal. Diamond has the characteristic properties such as high thermal conductivity, good thermal stability and good chemical stability. Furthermore, the band gap of boron-doped semiconductor diamond (5.5 eV) is wider than that of the other semiconductor materials. Thus, the synthetic semiconductor diamond is potentially one of the best materials for electronic devices in severe environments like high temperature and radiation. We have studied the electrical transport properties of boron-doped synthetic semiconductor diamond of single crystal [1] and characterized natural and synthetic single crystal diamonds by measurements of the Xray integrated scattering intensity, lattice parameter and diffuse scattering [2][3][4].Diamond usually contains nitrogen to some extent, and is divided into two classes [5]. One contains nitrogen atoms (type Ia and Ib) , the other less nitrogen atoms (type IIa and IIb). It is known that the concentration of nitrogen atoms in the natural diamond (Ia) is about 1000 ppm or more , and in the synthetic diamond (Ib) about 100 ppm. High purity synthetic diamond (IIa) contains nitrogen atoms of a few ppm. Boron-doped synthetic diamond (IIb) contains nitrogen atoms of a few ppm and boron atoms of about 100 ppm. It is of great interest to locate nitrogen atoms in diamonds with various nitrogen concentrations. XDS is a powerful method to detect such the location of nitrogen atoms , clustering of atoms and dislocation loops [6,7].In this study, the synthetic single crystal diamonds (Ib) irradiated with 100 MeV carbon-ion were characterized by measurements of the X-ray lattice parameter and XDS at room temperature. The results are compared with those for high purity synthetic diamond of single crystal (IIa) and boron-doped single crystal diamond (IIb) already reported by us [2][3][4].

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Section: Resultsmentioning

confidence: 86%

Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

“…The results are compared with those for high purity synthetic diamond of single crystal (IIa) and boron-doped single crystal diamond (IIb) already reported by us [2][3][4].…”

mentioning

confidence: 81%

mentioning

confidence: 99%

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X‐ray diffuse scattering from carbon‐ion‐irradiated diamond

Sugai

Maeta

Matsumoto

et al. 2007

Phys. Status Solidi (c)

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High yield fabrication of fluorescent nanodiamonds

et al. 2009

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A new fabrication method to produce homogeneously fluorescent nanodiamonds with high yields is described. The powder obtained by high energy ball milling of fluorescent high pressure, high temperature diamond microcrystals was converted in a pure concentrated aqueous colloidal dispersion of highly crystalline ultrasmall nanoparticles with a mean size less than or equal to 10 nm. The whole fabrication yield of colloidal quasi-spherical nanodiamonds was several orders of magnitude higher than those previously reported starting from microdiamonds. The results open up avenues for the industrial cost-effective production of fluorescent nanodiamonds with well-controlled properties.

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Symmetry of platelet defects in diamond: new insights with synchrotron light

Bosak

Chernyshov

Krisch

et al. 2010

Acta Crystallogr Sect B

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Mapping of reciprocal space for Ia-type diamond single crystals with synchrotron radiation has uncovered a variety of diffuse scattering features, some of them have not been observed before. The main component of diffuse scattering in the form of diffuse rods corresponds to a set of platelets which join together blocks of diamond structure. The platelets are ordered structural entities with lattice periodicity 8(1/2)a(0) x (1/2)(1/2)a(0) x 0.55a(0), where a(0) is a unit-cell dimension of diamond. Intensity distribution along the rods has been measured and used for recognition of symmetry elements of the platelet structure. These findings, together with previously reported transmission electron microscopy (TEM) observations, provide strong constraints for atomistic modelling of the platelet structure.

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The characterization of synthetic and natural single crystal diamonds by X-ray diffraction

Cited by 3 publications

References 7 publications

X‐ray diffuse scattering from carbon‐ion‐irradiated diamond

X‐ray diffuse scattering from carbon‐ion‐irradiated diamond

High yield fabrication of fluorescent nanodiamonds

Symmetry of platelet defects in diamond: new insights with synchrotron light

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