The characterization of GH shifts of surface plasmon resonance in a waveguide using the FDTD method

Abstract

We have explicated the Goos-Hänchen (GH) shift in a mum-order Kretchmann-Raether configuration embedded in an optical waveguide structure by using the finite-difference time-domain method. For optical waveguide-type surface plasmon resonance (SPR) devices, the precise derivation of the GH shift has become critical. Artmann's equation, which is accurate enough for bulk optics, is difficult to apply to waveguide-type SPR devices. This is because Artmann's equation, based on the differentiation of the phase shift, is inaccurate at the critical and resonance angles where drastic phase changes occur. In this study, we accurately identified both the positive and the negative GH shifts around the incidence angle of resonance. In a waveguide-type Kretchmann-Raether configuration with an Au thin film of 50 nm, positive and negative lateral shifts of -0.75 and + 1.0 microm are obtained on the SPR with the incident angles of 44.4 degrees and 47.5 degrees, respectively, at a wavelength of 632.8 nm.

OMCVD Gold Nanoparticles Covalently Attached to Polystyrene for Biosensing Applications

“…2.6. This is referred to as the "Goos-Hanchen effect", resulting from the propagation of an evanescent wave parallel to the interface [50].…”

“…2.6 Schematic of total internal reflection at the interface between two media having indices of refraction n1 and n2 (n1 > n2) [50] As the guided light travels through the waveguide, it produces different modes, which are solutions to the Maxwell's equations, depending on the boundary conditions at the interfaces, and the way the wave is coupled into the waveguide. It can be either transverse electric (polarized light whose electric field is normal to the plane of incidence) such as TE0, TE1, TE2 etc.…”

Tunneling-induced giant Goos–Hänchen shift in quantum wells

“…The Goos-Hänchen (GH) effect happens when a linearly polarized light undergoes a small lateral shift for the totally internal reflection from the interface of two different media [1]. The observation by Goos and Hänchen in 1947 has attracted considerable interest because of a variety of applications in optical heterodyne sensing and precision measurement, such as refractive index, displacement, temperature, and film thickness [2][3][4]. Interesting proposals toward the control or enhancement of GH shift have already been proposed to have negative and positive GH shifts [5][6][7][8][9].…”

A proposal for digital electro-optic switches with free-carrier dispersion effect and Goos-Hanchen shift in silicon-on-insulator waveguide corner mirror

“…8,9 In the past years, the Goos-Hanchen (GH) shift phenomenon of the reflected beam in the total internal reflection (TIR) process has activated a variety of theoretical investigations, and the new optical materials and manufacture technologies for the GH effect are widely developed and applied, in which much more novel and significant physical phenomena have been found and reported. [10][11][12][13][14][15] At the condition of plane and quasi-plane waves, the first theoretically impressive research was done by Wild and Giles in 1982. 11 the certain circumstances, the GH shift can be either positive or negative and both of these two shifts can achieve several wavelengths in magnitude.…”

“…Thus, in the past years, when the integrated optical technologies have shown a broad landscape of applications, research works have been transferred onto the impacts of GH effect upon the optical guided-modes and mainly aimed to get the formula of optical loss of a reflected mode at an interface of waveguide and corner turning mirror (CTM), the dependence of the optical loss of reflected mode upon the structures of both waveguide and CTM, incident angle and the relative position between the waveguide and CTM, including the tilt angle of reflecting interface of corner mirror, the guidedmode condition and the polarization state. 14,15 In our previous work, in order to realize a new functionality of ultra-fast digital optical switching within the compact PIC chips, on the SOI platform we directly targeted to the sufficient control to GH effect at the reflecting interface of waveguide CTM structure, then proposed and investigated a new regime of digital optical switch with the FCD based optical RIM of silicon layer to control the GH shift and further realize the 1 Â 2 switching functionality between two output ports. 16,17 For the new 1 Â 2 micro-size optical switch, we performed the systematical theoretical modeling and systematical simulations, the investigations for the performances of both passive optical part and active electrical drive part, including the optical transfer efficiency from single-channel to multiple channels of micro-and submicro-scale SOI optical waveguides at the CTM structure and the modulation efficiency/depth with the optimal distributions of both doping areas and drive electrodes, obtained fundamental progresses.…”