The characteristics of silicon voltage-reference diodes

Garside, A.E.; Harvey, Phil

doi:10.1049/pi-b-2.1959.0181

Cited by 4 publications

(2 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Zener diode is a diode that is designed to operate in the reverse breakdown of its safe operating area. The breakdown mechanism of Zener diodes changes depending on voltage level [10]. For voltage lower than 4.5 V, the breakdown mechanism has been identified as the Zener effect.…”

Section: Zener Diode Propertiesmentioning

confidence: 99%

Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI

Spro

Basu²,

Abuishmais³

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

View full text Add to dashboard Cite

The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. This paper investigates the effect of changing gate resistances and including a Zener diode for overvoltage protection in the gate circuit. The goal is to achieve low switching losses and low EMC signature. Due to the very low gate capacitance of the GaN HEMT compared to the junction capacitance of the Zener diode, the addition of the Zener diode has an effect on the switching waveforms. The effects were investigated through simulation and measurements on a 1 kW PFC boost converter. The Zener diode was shown to increase time delay between the PWM signal and the switching of the GaN device. Furthermore, both fall and rise times of the drain-source voltage were influenced. Efficiency and EMC measurements highlight that the choice of gate resistor is an optimization problem, as faster switching increases efficiency but increase the EMC signature of the converter.

show abstract

Section: Zener Diode Propertiesmentioning

confidence: 99%

Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI

Spro

Basu²,

Abuishmais³

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

View full text Add to dashboard Cite

show abstract

“…9 For use as a reference source, the most important of these are the slope or dynamic resistance in the breakdown region and the temperature coefficient of the operating voltage. The slope resistance as a function of both the breakdown voltage and the diode current is shown in Fig.…”

mentioning

confidence: 99%

The design of direct voltage and current stabilizers using semiconductor devices

Wenham¹

1959

Proceedings of the IEE - Part B: Electronic and Communication Engineering

View full text Add to dashboard Cite

The design of direct voltage and current stabilizers using semiconductor diodes and transistors is discussed, and a design procedure is given. The basic circuit considered is that in which a control element is placed in series with the supply and the load. The voltage across, or the current through, the load is compared with a reference and the difference is used to control the voltage drop across, or the current flowing through, the control element. The control is effected so as to keep constant the voltage across, or the current through, the load.Methods of achieving high stability against changes in input (or supply) voltage and changes in load are described. The effect of changes in ambient temperature on the output is considered and methods of minimizing this are given. Other factors considered are the transistor parameters which affect the degree of stabilization and limit the load current and/or voltage, and the response of the stabilizers to sudden changes in load. The design of a suitable power supply to enable the stabilizers to be used with a.c. mains is mentioned.The silicon junction diode operated in the Zener breakdown region is used as the reference element. Its properties and use as a voltage reference are discussed, including methods of reducing the temperature coefficient.The power-handling capabilities of the conventional series stabilizer are limited by the dissipation of the series transistor. The possibility of using non-dissipative regulator circuits is considered. LIST OF SYMBOLSV eb = Base-emitter voltage. V ce = Collector-emitter voltage.I c = Collector current. I e = Emitter current. R s = Transistor output resistance, d V eb /7il e . g m = Transistor mutual conductance, ~blJ%V eb . hf c -Common-collector current gain. hf e = Common-emitter current gain. hf b = Common-base current gain. r e = Emitter resistance ~ 25// e (/ e in mA).R m -Mutual resistance of current stabilizer. R L -Load resistance. r 2 = Internal resistance of reference source.(1) INTRODUCTION The principles of direct voltage and current stabilizers of the series type have been described by Benson 1 and many designs using thermionic valves have been published. Because of its ability to operate at low voltages and high currents the transistor is a more suitable device than the thermionic valve for use in low-voltage supplies. Although the literature already contains a number of papers 2 " 6 on this topic it is the object of the paper to review some of the basic factors that are involved when designing stabilizers around transistors and also to describe some additional possibilities.The output voltage and current ranges of transistor stabilizers are limited to about 50 volts and 10 amp respectively with transistors at present available. Voltages up to 200 volts and currents of 20 amp can be achieved if certain precautions are observed.When assessing the performance of a stabilizer the parameters usually measured are the stability of the output with changes in input voltage, load resistance and ambient temperature. Another...

show abstract

PN Junctions

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

View full text Add to dashboard Cite

The characteristics of silicon voltage-reference diodes

Cited by 4 publications

References 5 publications

Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI

Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI

The design of direct voltage and current stabilizers using semiconductor devices

PN Junctions

Contact Info

Product

Resources

About