The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT

Abstract

In this letter, a normally-off AlGaN/GaN MIS-HEMT using fluorinated gate dielectric was presented. The fluorine ions were injected into the Al 2 O 3 gate dielectric to obtain positive threshold voltage (V th ) as well as avoiding the plasma induced to the GaN channel layer. Moreover the maximum transconductance of fluorinated gate MIS-HEMT has been improved compared with the non-treated MIS-HEMT. Furthermore, the fluorine ions injected into the Al 2 O 3 gate dielectric could decrease the trap states density (D T ) and time constant (τ T ) at the Al 2 O 3 /GaN interface. The normally-off MIS-HEMT showed a very high drain current of 507 mA/mm and V th of 0.6 V.

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

“…Gallium nitride (GaN) based devices are considered as the promising choices for high power and high frequency applications, due to their outstanding wide bandgap, superior thermal stability, excellent conductivity and chemical stability [1][2][3][4]. The GaN Schottky barrier diodes (SBDs) possess strong nonlinear (rectification) effect, simple fabrication process, and easy to integrate with other units have been applicated in many different areas such as power switching, terahertz sources and detectors, microwave rectifier and so on [5][6][7].…”