The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method

Abstract

We employ the theory of band-bending effects to explain the channel-width dependence of the mobility of a two-dimentional hole gas (2DHG) in narrow square Si/Si1−xGex/Si quantum well at high Ge content. The numerical calculation of scattering mechanisms is shown in comparison with the ones from the previous computations. Our method enables a better quantitative description of recently measured data about the dependence of the 8 K mobility of holes in a Si/Si0.2Ge0.8/Si quantum well on the channel width varying from 25 − 70Å.