1972
DOI: 10.1016/0022-1902(72)80368-3
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The cerium-oxygen-carbon system

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Cited by 12 publications
(2 citation statements)
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“…It was shown in literature that these residues, i.e. Cl or C, can remain in the material up to high temperatures and incorporate ceria resulting in low packaging densities [23][24][25]. In addition, these chemical residues affect the crystallization and grain growth kinetics through thermal post-annealing of the material [26].…”
Section: Dry-and Wet-chemical Etching Of Ceria-based Thin Films Towarmentioning
confidence: 97%
“…It was shown in literature that these residues, i.e. Cl or C, can remain in the material up to high temperatures and incorporate ceria resulting in low packaging densities [23][24][25]. In addition, these chemical residues affect the crystallization and grain growth kinetics through thermal post-annealing of the material [26].…”
Section: Dry-and Wet-chemical Etching Of Ceria-based Thin Films Towarmentioning
confidence: 97%
“…A tentative ternary diagram for the Ce-O-C system at temperatures below 1873 K has been reported by Clark and McColm [6]. Anderson and Bagshaw [7], have tried to determine the oxygen contamination in the binary cerium/carbon system and to investigate the possibility of oxygen stabilizing a cerium monocarbide phase with a rock-salt type structure.…”
Section: Introductionmentioning
confidence: 99%