The Capture/Emission Time Map Approach to the Bias Temperature Instability

Grasser, Tibor

doi:10.1007/978-1-4614-7909-3_17

Cited by 35 publications

(46 citation statements)

References 84 publications

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“…Instead, the classical formulation is already determined by the reorganization energies S i ω i and S j ω j [34], which are therefore better suited to characterize the potentials V i (Q i ) and V j (Q j ). However, the potential V j (Q j ) can be discussed using the quanity R i [65,165], defined by 10) in which the states i and j refer to the neutral and the positive charge state, respectively. R i relates the reorganization energies of the involved charge states.…”

Section: Vi2 Impact Of Quantum Effects On the Temperature Dependencementioning

confidence: 99%

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Goes

Wimmer

El-Sayed

et al. 2018

Microelectronics Reliability

113

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It is well-established that oxide defects adversely affect functionality and reliability of a wide range of microelectronic devices. In semiconductor-insulator systems, insulator defects can capture or emit charge carriers from/to the semiconductor. These defects feature several stable configurations, which may have profound implications for the rates of the charge capture and emission processes. Recently, these complex capture/emission events have been investigated experimentally in considerable detail in Si/SiO2 devices, but their theoretical understanding still remains vague. In this paper we discuss in detail how the capture/emission processes can be simulated using the theoretical methods developed for calculating rates of charge transfer reactions between molecules and in electro-chemistry. By employing this theoretical framework we link the atomistic defect configurations to known trapping model parameters (e.g. trap levels) as well as measured capture/emission times in Si/SiO2 devices. Using density functional theory (DFT) calculations, we investigate possible atomistic configurations for various defects in amorphous (a)-SiO2 implicated in being involved in the degradation of microelectronic devices. These include the oxygen vacancy and hydrogen bridge as well as the recently proposed hydroxyl E center. In order to capture the effects of statistical defect-to-defect variations that are inevitably present in amorphous insulators, we analyze a large ensemble of defects both experimentally and theoretically. This large-scale investigation allows us to prioritize the candidates from our defect list based on their trap parameter distributions. For example, we can rule out the E center as a possible candidate. In addition, we establish realistic ranges for the trap parameters, which are useful for model calibration and increase the credibility of simulation results by avoiding artificial solutions. Furthermore, we address the effect of nuclear tunneling, which is involved according to the theory of charge transfer reactions. Based on our DFT results, we demonstrate the impact of nuclear tunneling on the capture/emission process, including their temperature and field dependence, and also give estimates for this effect in Si/SiO2 devices.

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Section: Vi2 Impact Of Quantum Effects On the Temperature Dependencementioning

confidence: 99%

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Goes

Wimmer

El-Sayed

et al. 2018

Microelectronics Reliability

113

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“…The performance of metal–oxide–semiconductor field-effect transistors (MOSFETs) is affected by a number of detrimental factors, such as random telegraph noise (RTN) [ 1 , 2 ], 1/f noise [ 3 ] and bias temperature instability (BTI) [ 4 – 7 ]. Although these effects have been studied for more than 40 years, the underlying physical mechanisms are still controversial [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Role of hydrogen in volatile behaviour of defects in SiO ₂ -based electronic devices

et al. 2016

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Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. Recent advances in experimental techniques used for probing defect properties have led to new insights into their characteristics. In particular, these experimental data show a repeated dis- and reappearance (the so-called volatility) of the defect-related signals. We use multiscale modelling to explain the charge capture and emission as well as defect volatility in amorphous SiO2 gate dielectrics. We first briefly discuss the recent experimental results and use a multiphonon charge capture model to describe the charge-trapping behaviour of defects in silicon-based MOSFETs. We then link this model to ab initio calculations that investigate the three most promising defect candidates. Statistical distributions of defect characteristics obtained from ab initio calculations in amorphous SiO2 are compared with the experimentally measured statistical properties of charge traps. This allows us to suggest an atomistic mechanism to explain the experimentally observed volatile behaviour of defects. We conclude that the hydroxyl-E′ centre is a promising candidate to explain all the observed features, including defect volatility.

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“…Hafnia layers are also applied in resistive memory devices [5][6][7] and as the gate dielectric for thin film transistors (TFTs) based on metal oxide channel materials, such as indium zinc oxide and indium gallium zinc oxide [8][9][10]. However, charge instability of Hf oxide films is becoming an increasingly significant issue since it directly impacts electric field in the charge transport region [11]. In particular, bias-temperature instabilities related to both positive and negative charging of ultrathin hafnia layers in CMOS devices appear to increase exponentially as the film thickness decreases to the range of a few nanometers [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…However, charge instability of Hf oxide films is becoming an increasingly significant issue since it directly impacts electric field in the charge transport region [11]. In particular, bias-temperature instabilities related to both positive and negative charging of ultrathin hafnia layers in CMOS devices appear to increase exponentially as the film thickness decreases to the range of a few nanometers [11][12][13][14]. The charging-related reliability issues actually set the physical limit for the gate oxide scaling, however, despite huge practical significance, the origin of this charging behavior of a-HfO 2 remains unknown.…”

Section: Introductionmentioning

confidence: 99%

Interactions of hydrogen with amorphous hafnium oxide

2017

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We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a-HfO 2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and −1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a-HfO 2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016).] forming a [e − tr + O-H] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a-HfO 2 and the electrical behavior of amorphous hafnia films in CMOS devices.

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The Capture/Emission Time Map Approach to the Bias Temperature Instability

Cited by 35 publications

References 84 publications

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Role of hydrogen in volatile behaviour of defects in SiO ₂ -based electronic devices

Interactions of hydrogen with amorphous hafnium oxide

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The Capture/Emission Time Map Approach to the Bias Temperature Instability

Cited by 35 publications

References 84 publications

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Role of hydrogen in volatile behaviour of defects in SiO 2 -based electronic devices

Interactions of hydrogen with amorphous hafnium oxide

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Product

Resources

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Role of hydrogen in volatile behaviour of defects in SiO ₂ -based electronic devices