The bound states of Fe impurity in wurtzite GaN

Abstract

A study on the bound states of Fe impurities in GaN by ultraviolet photoluminescence (PL) emissions is presented. Two elusive PL lines were observed at 3.463 eV (L1) and 3.447 eV (L2), respectively. The intensities of the two lines are proportional to the Fe concentration. The temperature dependence of L1 and L2 revealed acceptor-like and strong localized characteristic, respectively. Furthermore, Raman analysis indicated that L2 is correlated to an exciton bound to a nitride-vacancy (VN) related complex, i.e., [Fe2+-VN]. By co-doping with Si, the [Fe2+-VN]-related bound state will enable the spin-coupling between isolated iron ions.

Progress in bulk GaN growth

“…Hence, an Fe-V N complex structure-related Raman mode is considered. [77] 4. Progress of Na-flux grown GaN…”

Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy

“…[19][20][21] In this Letter, we report our investigation on the SAW properties of thick semiinsulating Fe-doped GaN films grown by HVPE. It is found that Fe-doped GaN films exhibit lower insertion loss and higher electromechanical coupling coefficient for Rayleigh mode than non-intentionally (nid) doped GaN films.…”

“…In this work, Fe-doped GaN epitaxial films with wurtzite structure were grown on (0001) sapphire substrate, and the crystal orientation GaN is parallel to sapphire [11][12][13][14][15][16][17][18][19][20]. Two Fe-doped GaN samples of different thickness were employed in our experiment, and their thickness are respectively 33 lm (sample 1) and 15lm (sample 2).…”

“…Each delay line consists of two symmetric IDTs, and each IDT includes 50 pairs of electrode finger. The propagation of the SAW is made to along the or [11][12][13][14][15][16][17][18][19][20] direction of GaN. The transmission and reflection parameters of delay lines were measured by vector network analyzer (Agilent E5071C).…”

Optical nonlinearities and carrier dynamics in Fe doped GaN single crystal

“…[11][12][13] Previous PL studies analysed the infrared emissions (1.30 eV) related to Fe 3þ , 14 and the nearband-edge emission of GaN:Fe. 15 Detailed studies of the optical absorption and reflectance of GaN:Fe versus the Fe doping were also presented. 16,17 As a deep acceptors, the lifetime of PL was modulated due to carrier trapping of Fe deep acceptors in GaN:Fe.…”