The Bethe condition for thermionic emission near an absorbing boundary

Berz, F.

doi:10.1016/0038-1101(85)90031-0

Cited by 37 publications

(10 citation statements)

References 8 publications

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“…The critical distance is roughly the distance for the first of potential drop in the channel, typically a small portion of the physical channel length [7]. Equation (2b) is closely related to the Bethe Condition for thermionic emission, and is the width of the so-called " -layer" defined by Berz [12].…”

Section: Theorymentioning

confidence: 99%

On the mobility versus drain current relation for a nanoscale MOSFET

Lundstrom

2001

IEEE Electron Device Lett.

220

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The dependence of the linear and saturated drain current of a nanoscale MOSFET on the near-equilibrium, inversion layer mobility of a long-channel device from the same technology is examined. Simple expressions developed from a scattering theory of the MOSFET provide a quantitative relation between the long-channel mobility and the short-channel drain current. The theory explains the commonly observed mobility-dependence of the linear and saturated drain currents in present-day deep submicron MOSFETs, and the results can be extrapolated all the way to the ballistic limit.

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Section: Theorymentioning

confidence: 99%

On the mobility versus drain current relation for a nanoscale MOSFET

Lundstrom

2001

IEEE Electron Device Lett.

220

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“…A similar problem, transport in Schottky barriers, was considered by Bethe 37 and by Berz. 38 the Joule losses, and we do not believe that cooling powers above the ballistic limit discussed in previous sections could be achieved. Fischetti et al also discussed "downstream" effects 40scattering in the barrier itself and in the well beyond the barrier.…”

Section: Discussionmentioning

confidence: 85%

On momentum conservation and thermionic emission cooling

Kim

Jeong

Lundstrom

2010

Journal of Applied Physics

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The question of whether relaxing momentum conservation can increase the performance of thermionic cooling device is examined. Both homojunctions and heterojunctions are considered. It is shown that for many cases, a non-conserved lateral momentum model overestimates the current. For the case of heterojunctions with a much heavier effective mass in the barrier and with a low barrier height, however, non-conservation of lateral momentum may increase the current. These results may be simply understood from the general principle that the current is limited by the location, well or barrier, with the smallest number of conducting channels. These results also show that within thermionic emission framework, the possibilities of increasing thermionic cooling by relaxing momentum conservation are limited. More generally, however, when the connection to the source is weak or in the presence of scattering, the situation may be different. Issues that deserve further study are identified.Comment: 36 pages, 1 table, 9 figure

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“…The near-equilibrium mean-free-path, λ 0 , can be estimated from the mobility at the beginning of the channel, and we find that λ 0 ≈ 7.8 nm. According to eqn (8), r ≈ 0.35. Finally, if we use eqn (7) to estimate the on-current, we find that I DS (on) ≈ 850 µA µm −1 , which is reasonably close to the DD result shown in Fig.…”

Section: Estimating the Backscattering Coefficientmentioning

confidence: 98%

“…where [2] r = + λ 0 (8) with being a critical, bias-dependent length corresponding to the distance over which channel potential drops by k B T /q [2]. In the terminology of metal-semiconductor junctions, is the width of the so-called kT layer [8].…”

Section: Scattering Theory Of the Mosfetmentioning

confidence: 99%