PSCs thus seem capable of exceeding the power conversion efficiency (PCE) of monolithic silicon photovoltaics, currently with a champion PCE of 26.7%. [3] Furthermore, their wider bandgap relative to silicon makes them an ideal option for multijunction siliconperovskite tandem cells with PCEs of up to 29.8% already realized. [3] Theoretical efficiency predictions for multijunction silicon-perovskite tandem cells exceed 38% as they are not constrained by the thermodynamic limits of single-junction cells. [11] In order to reach the theoretically predicted PCEs in perovskite-based singleand multijunction cells, further advances in PSC research are required.Nonradiative recombination losses in PSCs, occurring within the bulk of the MHP absorber and at MHP/charge transport layer (CTL) interfaces, have been established to be the dominant factor that limits the attainment of higher PCE. Losses resulting from bulk and interfacial nonradiative recombination are known to limit the PSCs open-circuit voltage (V OC ) and the fill factor (FF), leading to suboptimal power conversion. [12,13] Although there has been a number of research, the dominant sources and pathways of nonradiative recombination in PSCs is still a topic of debate. For example, non-negligible defect densities in solution processed MHP thin films have been reported to vary between 10 14 and 10 18 cm −3 . [14][15][16] Thus, high PCE in perovskites have been claimed to be as a result of the high defect tolerance in MHPs. This is supported by advanced theoretical calculations [17,18] using density functional theory (DFT) with hybrid functionals and including spin-orbit coupling (SOC) effects, which predict that most point defect types in MHP films form shallow traps, with the exception of less abundant iodine defects, thereby explaining the defect tolerance of MHPs. By contrast, experimental studies including the observation of subunity internal photoluminescence quantum yields (PLQY) [19,20] strongly suggests that defects certainly seem to play an important role in the optoelectronic properties of MHPs and cannot be neglected. Furthermore, recent reports suggest that nonradiative recombination losses across the MHP/CTL interfaces are of more importance than nonradiative losses in the bulk of MHPs. [21][22][23][24][25][26][27] Current approaches for suppressing nonradiative recombination focuses on grain boundaries within the bulk of MHPs and MHP/CTL interfaces. This includes chemical additives for passivating traps within the perovskite bulk and at grain boundaries (GBs). [28,29]