The behaviour of a typical single-crystal Si solar cell under high intensity of electric field

Erel, Şerafettin; Akçil, Mustafa; Erel, Gazi Kamil; Çelik, Veli Onur

doi:10.1016/j.solmat.2005.04.038

Cited by 8 publications

(7 citation statements)

References 8 publications

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“…This submission is causing the decrease of the open circuit photovoltage. This decrease is caused by the surface and the volume recombination and by the ionization which is the strong electric field effect [14]. But this experimental study does not seem to prove the presence of the conduction current demonstrated by Ouedraogo et al [9] which is engendered by the electric field.…”

Section: Introductioncontrasting

confidence: 54%

“…But this experimental study does not seem to prove the presence of the conduction current demonstrated by Ouedraogo et al [9] which is engendered by the electric field. The decrease of the open circuit photovoltage is the effect of an important crossing of the junction of the solar cell by the minority charge in excess as shown by Zoungrana et al (2012) [12] and not by the surface and volume recombination following Erel et al (2006) [14]. Then, the energy provided by the electric field is lower than 12 eV, so it can not cause the ionization of the semiconductor of silicon [15].…”

Section: Introductionmentioning

confidence: 99%

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Improvement of the Silicon Solar Cell Performance by Integration of an Electric Field Source in the Solar Cell or Solar Module System

Ouedraogo¹,

Bazyomo²,

Ouédraogo³

et al. 2018

SGRE

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This manuscript is about a theoretical modelling of conversion efficiency improvement of a typical polycrystalline Si solar cell in 1D assumptions. The improvement is brought by the increase of the collection of the minority carriers charge in excess. This increase is the consequence of the influence of an electric field provided by the use of the open circuit photovoltage of another silicon solar cell. We assume that it is integrated two silicon solar cells to the system. The first solar cell provides the open circuit photovoltage which is connected to two aluminum planar armatures creating a planar capacitor. The second solar cell is placed under the uniform electric field created between the two aluminum armatures. This work has shown an improvement of the output electric power leading to the increase of the conversion efficiency. We observe an increase of 0.7% of the conversion efficiency of the second silicon solar cell.

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Section: Introductioncontrasting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Improvement of the Silicon Solar Cell Performance by Integration of an Electric Field Source in the Solar Cell or Solar Module System

Ouedraogo¹,

Bazyomo²,

Ouédraogo³

et al. 2018

SGRE

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“…The energy gap of the silicon matter are influenced by the electric and magnetic field [6]. The high electric strength can cause the bulk and surface recombination ionization [5]. Thus, the electromagnetic field causes a reduction of the PV cell performances.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the crystalline silicon photovoltaic cell performances under electromagnetic field by base doping level

OUEDRAOGO,

SAWADOGO,

DIANDA

et al. 2024

Preprint

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The present paper provides a study about the capacity of a crystalline silicon photovoltaic (PV) cell to resist well to electromagnetic field effects. The novelty of this study is found in the identification of a better doping rates range where a crystalline silicon PV cell can resist well against the deterioration of its performances due to an electromagnetic field. After the fundamental equations solve, the electrical parameters and individual energetic processes have been analysed. The estimated current of the PV cell decreases weakly when the base dopant level (N B) increase from 10 14 cm −3 to 10 17 cm −3 and the voltage, however, increases strongly. Beyond 10 17 cm −3 , the currents gives a strong decrease in contrast the voltage which provides a low increase. That can be explained by a best resistivity to the electromagnetic field found at 10 17 cm −3 and is consistent with the maximum electric power found in this doping level. Thermalization mechanism does not affected by the electromagnetic field and doping rate. But the analyses of the thermodynamic process behaviour and fill factor on the one hand and on the other hand the behaviour of the absorption mechanism, show that the best capability resistivity to the electromagnetic field is found at 10 17 cm −3. Hence the base doping in boron level can be used to improve the electromagnetic resistivity of the PV cell in crystalline silicon with a well control of the Light-Induced Degradation (LID).

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“…Individually the magnetic field causes the reduction of the current and the increase of the voltage due to the deflection of the carriers charge [5]. The electric field causes and increases of the current [6,7] due to the creation of the conduction current while the photovoltage decreases. The magnetic field of electromagnetic field from telecommunication antenna is weak but it can be not deleted as seen in some studies [8].…”

Section: Introductionmentioning

confidence: 99%

Individual Energetic Processes Efficiencies in a Polycrystalline Silicon PV Cell Versus Electromagnetic Field

Ouédraogo

Savadogo

Honadia

et al. 2021

Silicon

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The Photovoltaic (PV) system is often installed near the telecommunication antenna without takes account the performance degradation that the electromagnetic field can cause. The present work provides the recognition about the greatest losses occur which can cause the overall efficiency drop. In fact, the absorption and the thermodynamic processes are more sensitive to the variation of the electromagnetic field more than FF and thermalization processes in presence of the electromagnetic field. The absorption and thermodynamic mechanism are the main cause of the degradation of the polycrystalline silicon PV cell outputs. The PV cell having height base doping level to get a better resistivity to the electromagnetic field must be chosen to improve theses outputs. Then a low electromagnetic field zones must be searched to install the PV system improving its electrical production performance.

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The behaviour of a typical single-crystal Si solar cell under high intensity of electric field

Cited by 8 publications

References 8 publications

Improvement of the Silicon Solar Cell Performance by Integration of an Electric Field Source in the Solar Cell or Solar Module System

Improvement of the Silicon Solar Cell Performance by Integration of an Electric Field Source in the Solar Cell or Solar Module System

Improvement of the crystalline silicon photovoltaic cell performances under electromagnetic field by base doping level

Individual Energetic Processes Efficiencies in a Polycrystalline Silicon PV Cell Versus Electromagnetic Field

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