The basis of organic spintronics: Fabrication of organic spin valves

Chen, Binbin; Sheng-Wei, Jiang; Ding, Haifeng; Zheng-Sheng, Jiang; Wu, Di

doi:10.1088/1674-1056/23/1/018104

Cited by 10 publications

(8 citation statements)

References 52 publications

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“…In order to minimize the metal inclusion into the organic layers and hence to avoid the short circuit and to improve the accuracy of the thickness characterization, a few advances have been made recently in depositing the top FM electrodes. Chen et al showed the deposition of an FM electrode using back scattering method to avoid the direct hit of the metallic atoms onto the organic films . This method was reported to enhance the MR and was shown promising for the reproducibility of the OSV performance although unintentional impurities might be introduced during the slow metal evaporation due to quite low chamber vacuum (10 –3 torr).…”

Section: Advances In Organic Spin Valvesmentioning

confidence: 99%

Organic Spin Valves: A Review

Devkota

Geng

Subedi

et al. 2016

Adv Funct Materials

102

106

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accelerated impressively and advanced to a range of materials and a number of techniques to verify the successful injection and transport of the SP carriers. [ 1,2,10,11 ] The effect has been realized in a variety of materials combinations such as FM fi lms, FM/anti-FM coupled layers, or FM semiconductors as the injection/detection electrodes and the metals, superconductors, inorganic semiconductors, organic semiconductors, and insulators including ferroelectric and topological insulators as the spacers. [ 1,2,[12][13][14][15][16][17][18] The GMR effect was extensively studied using non-magnetic metallic interlayer and its applications such as electric switching, magnetic recording, and sensors were suggested and employed. [ 1,2,16 ] However, all-metallic spintronic devices imposed restrictions in applications as they are characterized by short spin relaxation time (≈picosecond) and are not suitable for coherent spin manipulation. [ 1,2,19 ] To overcome these limitations, the spintronics community caught its attention towards hybrid devices with semiconductors (SCs) sandwiched in between the FM layers and continued advancing to a range of semiconducting materials. [ 2,14,[20][21][22] The organic semiconductors (OSCs) are among the youngest members of the spacer materials and were fi rst tested in the spintronic devices only about a decade ago. Nevertheless, OSC devices have been of continuously advancing research topics over the past three decades for their rich physics, fl exible chemi stry, cost effi ciency, and potential applications in new generations of electronic devices including organic light emitting diodes (OLEDs), [23][24][25] organic solar cells, [ 26,27 ] and organic fi eld effect transistor. [ 28,29 ] In fact, OLEDs have already revolutionized the modern display industry and spin-dependent devices such as organic spin valves (OSVs), OLED-based magnetic sensors, and spin-OLEDs are under intensive study to achieve their new avenues. [30][31][32] This increasing interest on organic electronics is for their several distinctions over inorganic counterparts. [19][20][21]33,34 ] Electronically, the band theory explains the electric transport in inorganic SCs while charge hopping is the main transport mechanism in the OSCs with much smaller carrier mobility. This is a favorable condition for large electron-hole pair recombination without the need of using a p-n junction structure. [23][24][25] Spintronically, the inorganic SCs contain heavy atoms giving rise to a large spin-orbit coupling (SOC), which is a response of the electron spin degree of freedom to its orbital environment. The strength of the SOC in solids depends upon the nature of orbital wave functions of electrons and the materials structure. [ 35 ] In case of hydrogenic wave-function-like electrons (s-orbital electrons), it is Organic spintronics is an emerging and potential platform for future electronic devices. Signifi cant progress has been made in understanding the spin injection, manipulation, and detection in organic spin valves in the p...

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Section: Advances In Organic Spin Valvesmentioning

confidence: 99%

Organic Spin Valves: A Review

Devkota

Geng

Subedi

et al. 2016

Adv Funct Materials

102

106

View full text Add to dashboard Cite

show abstract

“…As a spin injection source, atomic flat LSMO electrode was grown on SrTiO 3 (001) by a DC facing-target magnetron sputtering method. AlO x was used as a buffer layer to protect against Co penetration and doping into P3HT spacer, reducing the thickness of ill-defined layer . Also, it could adjust the energy band alignment at the interface to facilitate the spin polarized carrier injection .…”

Section: Introductionmentioning

confidence: 99%

“…AlO x was used as a buffer layer to protect against Co penetration and doping into P3HT spacer, reducing the thickness of ill-defined layer. 27 Also, it could adjust the energy band alignment at the interface to facilitate the spin polarized carrier injection. 28 Along with a spin detection analyzer of 10 nm Co evaporated on top, up to 15.6% low-temperature magnetoresistance was achieved.…”

Section: ■ Introductionmentioning

confidence: 99%

Inverse Magnetoresistance in Polymer Spin Valves

Ding

Tian

et al. 2017

ACS Appl. Mater. Interfaces

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In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical LaSrMnO (LSMO)/P3HT/AlO/Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlO/Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.

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“…21,22 For this purpose, based on first-principles studies, we explored the properties of the BC 7 sheets induced by different biaxial strain. 21,22 For this purpose, based on first-principles studies, we explored the properties of the BC 7 sheets induced by different biaxial strain.…”

Section: Discussionmentioning

confidence: 99%

Novel spin-electronic properties of BC7 sheets induced by strain

Dai

Sui

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Based on first-principles calculations, the authors have investigated the electronic and magnetic properties of BC7 sheets with different planar strains. It is found that metal–semiconductor transition appears at the biaxial strain of 15.5%, and the sheets are characteristic of spin-polarized semiconductor with a zero band-gap. The band-gap rapidly increases with strain, and reaches a maximum value of 0.60 eV at the strain of 20%. Subsequently, the band-gap decreases until the strain reaches up to 22% and shows a semiconductor-half metal transformation. It will further present metal properties until the strain is up to the maximum value of 35%. The magnetic moments also have some changes induced by biaxial strain. The numerical analysis shows that the two-dimensional distortions have great influences on the magnetic moments. The novel spin-electronic properties make BC7 sheets have potential applications in future spintronic nanodevices.

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The basis of organic spintronics: Fabrication of organic spin valves

Cited by 10 publications

References 52 publications

Organic Spin Valves: A Review

Organic Spin Valves: A Review

Inverse Magnetoresistance in Polymer Spin Valves

Novel spin-electronic properties of BC7 sheets induced by strain

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