The basic I–V characteristics of memristor model: simulation and analysis

SPICE Behaviors of Double Memristor Circuits Using Cosine Window Function

“…For instance, when p 16, the state variable periodically saturates between the normalized boundary "1" from 0.295 + N to 0.705 + N s, where N is a natural number starting from 0. On the other hand, according to (6), the curves of the corresponding memristances can be obtained as seen in Figure 3B. When the memristor biased voltage is set as v(t) −sin(2πt), the calculated dynamical properties of the normalized doped state variable x(t) with different values of p is shown in Figure 3C, and the corresponding memristance curves are plotted in Figure 3D.…”

“…No great progress was developed in the research field of memristor until the group of Williams at Hewlett-Packard (HP) lab successfully fabricated the first nanoscale memristive device based on titanium dioxide thin film in 2008 [2]. Since then, many researchers or scholars have focused on the memristor research [3][4][5][6][7] and its numerous potential applications in nonvolatile random access memories [8,9], neuromorphic systems [10,11], chaotic circuits [12], reconfigurable logics [13,14] and RF/microwave devices [15,16].…”

Simulation of Electrical Characteristics of Switching Nanostructures "Pt – TiO – Pt" and "Pt – NiO – Pt" with Memory

“…In this regard, there is an intensive search for new metal-dielectric materials with memristic properties, as well as new models, describing their electrical characteristics [9], [10]. Various methods and modeling tools, such as SPICE (LTspice, Multisim and others), FEKO, Matlab, Verilog-A and others [11][12][13][14][15] have been developed to describe the memorial properties of various metal-dielectric materials.…”