The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si

Çaldıran, Zakir; Deniz, Ali Rıza; Aydoğan, Ş.; Yeşildağ, Ali; Ekinci, Duygu

doi:10.1016/j.spmi.2012.12.004

Cited by 63 publications

(23 citation statements)

References 15 publications

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“…One of the most commonly used rectifying connections in the electronics industry are metal–semiconductor (MS) contact or Schottky barrier diodes (SBDs), employed in a huge number of devices including solar cells, microwave diodes, field-effect photodetectors and transistors (FETs) [ 1 ]. These devices have often been used in telecommunication systems, radio astronomy, radar technology, and plasma diagnostics [ 2 ]. In recent decades due to the limitations of conventional materials, organic semiconductors such as deoxyribonucleic acid (DNA) and others have found many uses in electrical and optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Al-Ta’ii

Amin

Periasamy

2015

Sensors

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Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

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Section: Introductionmentioning

confidence: 99%

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Al-Ta’ii

Amin

Periasamy

2015

Sensors

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“…Caldiran et al 14 studied current-voltage characteristics of Au/ Anthracene/n-Si/Al Schottky barrier device and found two regimes of linear and nonlinear conduction. Caldiran et al 14 studied current-voltage characteristics of Au/ Anthracene/n-Si/Al Schottky barrier device and found two regimes of linear and nonlinear conduction.…”

Section: Introductionmentioning

confidence: 99%

“…Researchers have investigated Static Current Density (J)-Electric Field (E) characteristics of different solids. Caldiran et al 14 studied current-voltage characteristics of Au/ Anthracene/n-Si/Al Schottky barrier device and found two regimes of linear and nonlinear conduction. Kim et al 15 investigated Pt/TiO 2 /Pt structure and concluded with trap mediated and trap free SCLC controlled conduction mechanism.…”

Section: Introductionmentioning

confidence: 99%

Schottky–Richardson, Poole–Frenkel, and Space Charge Limited Current Mechanisms in M‐Type Sr(MnTi)_xFe_(12‐2x)O₁₉ Ferrite

et al. 2016

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The Static Current Density–Electric Field characteristics of Sr(MnTi)xFe(12‐2x)O19 ferrite compositions (x = 0.5, 1.0, 1.5, and 2.0) have been investigated from 4.15 to 36.30 kV/m at room temperature. Ohmic and nonohmic regions are observed at low and high field regimes. The various models, governing nonlinear conduction, are discussed qualitatively in terms of Space charge limited current (SCLC), Ionic hopping, Poole–Frenkel, Schottky–Richardson, and Fowler–Nordheim mechanisms. The results depict Child‐Langmuir type SCLC in the investigated compositions.

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“…More recently, as the size of Schottky contacts has been reduced to the nanoscale, the interface properties of these nanocontacts turn out to vary from their macroscopic counterpart . To date, tremendous effort has been dedicated to investigate the Schottky junction properties via I – V and C – V tests, of which the thermionic emission (TE) model and thermionic‐field emission (TFE) model were used to interpret the observed results . Nevertheless, the contribution of electronic transmission to the nano‐Schottky junction properties is still not completely understood.…”

Section: Introductionmentioning

confidence: 99%

Influence of electronic transmission on the electrical transport properties in metal–semiconductor contacts

Dai

Liu

Han

et al. 2015

Physica Status Solidi (a)

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A Pt/Si Schottky diode was prepared by depositing thin-film Pt on Si (100) via RF magnetron sputtering. The I-V characteristics of the nano-Schottky structure were measured by conductive-AFM (CAFM) and probe-based measurement, where nano-and micro-size tip was used, respectively. Result from both measurements showed the rectifying behaviors, whereas the leakage current detected by CAFM is about six orders of magnitude larger than that detected by the micromeasurement. It was proposed that this electronic transport discrepancy is mainly ascribed to the different electronic transmission. In order to reveal the characteristics of the Schottky junction, a thermionic emission (TE) model and thermionic-field emission (TFE) model were applied for the I-V data fitting. It was proved that the result can be well fitted by the TE model, with an ideality factor (IF) n ¼ 1-2 and barrier height (BH) 0.75-0.85 eV, indicating this Schottky diode approximates to an ideal Schottky diode (n ¼ 1).

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The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si

Cited by 63 publications

References 15 publications

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Schottky–Richardson, Poole–Frenkel, and Space Charge Limited Current Mechanisms in M‐Type Sr(MnTi)_xFe_(12‐2x)O₁₉ Ferrite

Influence of electronic transmission on the electrical transport properties in metal–semiconductor contacts

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The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si

Cited by 63 publications

References 15 publications

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

Schottky–Richardson, Poole–Frenkel, and Space Charge Limited Current Mechanisms in M‐Type Sr(MnTi)xFe(12‐2x)O19 Ferrite

Influence of electronic transmission on the electrical transport properties in metal–semiconductor contacts

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Schottky–Richardson, Poole–Frenkel, and Space Charge Limited Current Mechanisms in M‐Type Sr(MnTi)_xFe_(12‐2x)O₁₉ Ferrite