The band structures of gallium and indium selenide

McCanny, J.V.; Murray, Rory O’Hara

doi:10.1088/0022-3719/10/8/022

Cited by 105 publications

(33 citation statements)

References 24 publications

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“…The GaSe-type structure can be described as a stacking of hexagonal layers and there are four possible stacking arrangements leading to the four polytypes: ␤-, -, ␥-, and ␦-GaSe. 1 With such a unique structural anisotropy, GaSe has long been an interesting material for both experimental [1][2][3][4][5][6][7][8][9][10][11][12] and theoretical 1, [13][14][15] physics studies, and GaSe and related III-VI compounds have received considerable attention for their potential applications in various device structures. [16][17][18][19][20] Furthermore, advances in van der Waals epitaxy 21 have made it possible to grow single-phase high-quality III-VI compound thin films that renewed interests in GaSe.…”

Section: Introductionmentioning

confidence: 99%

Above-bandgap ordinary optical properties of GaSe single crystal

Choi

Levi

Martı́nez-Tomás

et al. 2009

Journal of Applied Physics

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We report above-bandgap ordinary optical properties of -phase GaSe single crystal. Reference-quality pseudodielectric function ͗͑E͒͘ = ͗ 1 ͑E͒͘ + i͗ 2 ͑E͒͘ and pseudorefractive index ͗N͑E͒͘ = ͗n͑E͒͘ + i͗k͑E͒͘ spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis ͑E ៝ Ќ ĉ͒. The ͗͘ spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values.

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Section: Introductionmentioning

confidence: 99%

Above-bandgap ordinary optical properties of GaSe single crystal

Choi

Levi

Martı́nez-Tomás

et al. 2009

Journal of Applied Physics

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“…The slight increase at the absorption edge indicates the presence of the defect states at the band gap. The band gap energy (E g ) of thin film was estimated on the basis of the recorded optical spectra using the following relation [24]:…”

Section: = Kλ/(βcosθ)mentioning

confidence: 99%

“…For direct band transitions n= 1/2 or 3/2, and for indirect band transitions n = 2 or 3, depending on whether they are allowed or forbidden transitions, respectively [24]. In this study, absorption spectra were fitted according to direct and indirect transitions and the best fits to the experimental data were obtained for n = 1/2 and 2.…”

Section: = Kλ/(βcosθ)mentioning

confidence: 99%

Structural and optical properties of gallium sulfide thin film

Ertap¹,

Baydar²,

Yüksek³

et al. 2016

Turk J Phys

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Structural, morphological, and optical properties of gallium sulfide film grown by chemical bath deposition have been investigated by XRD, SEM, AFM, and optical absorption techniques. The XRD spectrum indicated that the gallium sulfide film grew in crystalline form and the phase was identified as GaS. Gallium sulfide film had an island-like structure with a random distribution on a glass substrate. The particle size of the crystallites and surface roughness of the film were found to be 28-48 nm and 11.84 nm, respectively. The direct and indirect band gaps of gallium sulfide thin film were calculated from the absorption spectra as 2.76 and 2.10 eV, respectively.

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“…These special structures can exhibit unique in-plane and out-of-plane optical and electrical properties [1][2][3], which apply to potential applications in the field of terahertz radiation emission [4,5], radiation detectors [6,7], and solar cells [8] in the past few years. Most III-VIA layered compounds, such as GaS, GaSe, InSe [9,10], have hexagonal structure with all M-M (M = Ga, In) bonds perpendicular to the layers, and the main symmetry axis parallel to M-M bonds. However, GaTe has a monoclinic layered structure with C 2/m space-group symmetry, where only two third of Ga-Ga bonds lie perpendicular to the layers and the other one lies in the layers [11].…”

Section: Introductionmentioning

confidence: 99%

Lattice Vibration of Layered GaTe Single Crystals

et al. 2018

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Abstract:The effect of interlayer interaction on in-layer structure of laminar GaTe crystals was studied according to the lattice vibration using micro-Raman analysis. The results were also confirmed by the first principle calculations. Accordingly, the relationship between lattice vibration and crystal structure was established. Ten peaks were observed in the micro-Raman spectra from 100 cm −1 to 300 cm −1 . Eight of them fit Raman-active vibration modes and the corresponding displacement vectors were calculated, which proved that the two modes situated at 128.7 cm −1 and 145.7 cm −1 were related to the lattice vibration of GaTe, instead of impurities or defects. Davydov splitting in GaTe was identified and confirmed by the existence of the other two modes, conjugate modes, at 110.7 cm −1 (∆ω = 33.1 cm −1 ) and 172.5 cm −1 (∆ω = 49.5 cm −1 ), indicates that the weak interlayer coupling has a significant effect on lattice vibrations in the two-layer monoclinic unit cell. Our results further proved the existence of two layers in each GaTe unit cell.

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The band structures of gallium and indium selenide

Cited by 105 publications

References 24 publications

Above-bandgap ordinary optical properties of GaSe single crystal

Above-bandgap ordinary optical properties of GaSe single crystal

Structural and optical properties of gallium sulfide thin film

Lattice Vibration of Layered GaTe Single Crystals

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