1973
DOI: 10.1007/bf02832647
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The band-gap excitons in gallium selenide

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Cited by 232 publications
(103 citation statements)
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“…The resonant energy of a 1S exciton for GaSe is B2.11 eV [3]. The excitation source was an OPO system based on a Ti: sapphire mode-locked laser with a time resolution of 200 fs.…”
Section: Methodsmentioning
confidence: 99%
“…The resonant energy of a 1S exciton for GaSe is B2.11 eV [3]. The excitation source was an OPO system based on a Ti: sapphire mode-locked laser with a time resolution of 200 fs.…”
Section: Methodsmentioning
confidence: 99%
“…38 The z-polarized absorption is due to ⌺ g → ⌺ u transitions and the x , y-polarized absorption is due to ⌺ g → ⌸ u transitions. The relative intensities for these transitions may be evaluated from the dipole moment integrals ͑E mnp − E 011 ͉͒͗⌿ mnp ͉ x ͉ ⌿ 011 ͉͘ 2 , ͑E mnp − E 011 ͉͒͗⌿ mnp ͉ y ͉ ⌿ 011 ͉͘ 2 and ͑E mnp − E 011 ͉͒͗⌿ mnp ͉ z ͉ ⌿ 011 ͉͘ 2 , for x , y-and z-polarized transitions, respectively.…”
Section: ͑3͒mentioning
confidence: 99%
“…These layered semiconductor materials have been investigated for many years [1][2][3][4][5]. Interlayer bonding with in the Se-InIn-Se sheets is covalent while interlayer bonding is via weak Van der Waals-type interactions [6,7].…”
Section: Introductionmentioning
confidence: 99%