The Avalanche-Mode Superjunction LED

Abstract

Abstract-Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electro-luminescent (EL) spectra with the responsivity of Si photo-diodes. These EL spectra depend on the reverse electric field. We present, for the first time, AMLEDs employing the superjunction (SJ) assisted reduced surface field (RESURF) effect which increases the uniformity of their electric field profile. Consequently, the EL area of these lateral devices is significantly enlarged as compared to conventional AMLEDs. Electrical and optical measurements demonstrate RESURF, as predicted by TCAD simulations, and show a direct link between EL-intensity (optical power per unit device area) and the fieldprofile. Contrary to a conventional AMLED, the breakdown voltage of the SJ-LED scales with the device length. Further, the brightest SJ-LED, with a lateral intensity of ∼30 mW cm −2 at an electrical power (P AMLED ) of 0.1 W, shows a 2-fold higher internal quantum efficiency and a 3-fold higher EL-intensity compared to the conventional AMLED for the same P AMLED .

Nanomaterial-Enhanced Receptor Technology for Silicon On-Chip Biosensing Application

“…Further work by Xu et al led to the realization of a series of CMOS integrated LED devices with third terminal gated control [8]. Subsequently, the temperature, carrier density, and electric field encountered in Silicon Avalanche Mode Light Emitting Devices (Si AMLEDs) were analyzed by Duttal and Steeneken et al They also suggested operation of gated Si LED operating in the forward-biased mode and emitting in the 1100 nm region [12]. A major advantage with these devices is the realization of high modulation speeds ranging into the GHz due to the reverse bias configuration of Si AMLEDs [25,26].…”

“…If the detailed dispersion characteristics observed per solid angle for a particular device is known, it can enable the design of novel and futuristic on-chip electro-optic applications. Examples of such applications could include wavelength multiplexers for on-chip communication, diverse futuristic on-chip micro-and nano-dimensioned gas sensors and even on-chip biosensors [11][12][13][14]. In this chapter, a two-junction micro-dimension p + −np + Silicon Avalanche-based Light Emitting Device (Av Si LED) has been analyzed in terms of radiation geometrical dispersion characteristics, and with particular interest in the different wavelengths of light (colors) being emitted at different emission angles from the surface of the device.…”

Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

“…• The superjunction light-emitting diode (SJLED) [14], [15]. In this work we focus on the last approach.…”

“…The grey dashed line represents results obtained from Fulop's approximation [30], showing a discrepancy for smaller L. at breakdown (E x (x)) in the drift (or "active") region of the p-i-n diode, see Fig. 1(c), results in a higher EL-intensity thus η RAD compared to conventional pn junctions with the same breakdown voltage (BV ) [14]. In the latter E x (x) is triangularly shaped and hence only near the peak field, light emission spots will form.…”

Avalanche leds based on nanostructured silicon for optical interconnections

“…Исследователи из Нидерландов предложили конструкцию оптопары на основе кремниевых лавинных светодиодов [19]. Ими достигнута эффективность оптоэлектронной передачи сигнала (коэффициент передачи по току) 10 -8 .…”