The art of sp↑n electron↓cs

Gregg, J. F.; Allen, W.; Viart, N.; Kirschman, Randall; Sirisathitkul, Chitnarong; Schillé, Jean-Philippe; Gester, M.; Thompson, Sarah; Sparks, P.D.; Costa, V. Da; Ounadjela, K.; Skvarla, Mike

doi:10.1016/s0304-8853(97)00155-8

Cited by 63 publications

(12 citation statements)

References 7 publications

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“…Both the charge and spin of an electron may be utilized in the spintronic devices. Many experiments have been tried to inject spin polarized electrons into non-magnetic semiconductors by constructing ferromagnetic metal-semiconductor junctions [5]. However, the spin orientation is limited in a short distance from the junctions because the scattering of electrons at the Schottky barrier of metal-semiconductor interface may alter the spin orientation [6].…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetism of Ni cluster in Ni-doped ZnO by solid state reaction

Mao

Wang

2008

Journal of Magnetism and Magnetic Materials

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Section: Introductionmentioning

confidence: 99%

Ferromagnetism of Ni cluster in Ni-doped ZnO by solid state reaction

Mao

Wang

2008

Journal of Magnetism and Magnetic Materials

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“…Many suggested spintronic devices have not been demonstrated yet, but their potential seems enormous. Industrial issues related to spintronics can be found in [6,7], and [8] describes some of the recent spintronic schemes and devices.…”

Section: Introductionmentioning

confidence: 99%

Spin relaxation of conduction electrons

Fabian¹,

Sarma²

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

164

130

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Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic spin-electronic devices must be smaller than the distance electrons diffuse without losing its spin memory. Some recent experimental and theoretical effort has been devoted to the issue of modulating the spin relaxation. It has been shown, for example, that in certain materials doping, alloying, or changing dimensionality can reduce or enhance the spin relaxation by several orders of magnitude. This brief review presents these efforts in the perspective of the current understanding of the spin relaxation of conduction electrons in nonmagnetic semiconductors and metals.Comment: Invited paper at the International Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), San Diego (January, 1999); to be published in Journal of Vacuum Science and Technology

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“…Previous efforts were focused on the direct electrical injection of spinpolarized electrons using a ferromagnetic metal-coated on metal-semiconductor junction. 1 However, these effects suffer from the scattering of the spin-polarized carrier at the Schottky barrier of the metal-semiconductor interface, called the ''dead layer.'' In order to overcome the dead layer, recent advances in spin polarization came from the introduction of DMS.…”

mentioning

confidence: 99%

Study of diluted magnetic semiconductor: Co-doped ZnO

Lee

Jeong

Cho

et al. 2002

Applied Physics Letters

661

292

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We report on the high-temperature ferromagnetism in Co-doped ZnO films fabricated by the sol-gel method above 350 K. The lattice constant of c axis of wurtzite Zn 1Ϫx Co x O follows Vergard's law for 0ϽxϽ0.25. For Zn 1Ϫx Co x O with xу0.25, a secondary phase is detected. The Zn 1Ϫx Co x O exhibits ferromagnetic behavior with a Curie temperature higher than 350 K. By the results of x-ray photoelectron spectroscopy measurement, we assume that Co occupied the Zn site without changing the wurtzite structure. In the case of xϭ0.2, the coercive field measured by a magnetizationmagnetic field hysteresis curve at 350 K was nearly 80 Oe. Additionally, we investigated the electric structure through first-principles pseudopotential plane-wave calculation.

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The art of sp↑n electron↓cs

Cited by 63 publications

References 7 publications

Ferromagnetism of Ni cluster in Ni-doped ZnO by solid state reaction

Ferromagnetism of Ni cluster in Ni-doped ZnO by solid state reaction

Spin relaxation of conduction electrons

Study of diluted magnetic semiconductor: Co-doped ZnO

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