The Application of Thyristors as Main Switches in Railguns

Spahn, E.; Buderer, G.; Wegner, V.; Jamet, F.

doi:10.1109/ppc.1993.513639

Cited by 15 publications

(2 citation statements)

References 3 publications

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“…Fast switching thyristors have been investigated for several years at ISL, as described by Spahn et al (1993). The preferred type has an interdigitated gate structure that allows fast switching (greater than 700 A / p ) by ensuring uniform turn-on.…”

Section: Vii-8mentioning

confidence: 99%

Non-US electrodynamic launchers research and development

Parker¹,

Batteh²,

Greig³

et al. 1994

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Section: Vii-8mentioning

confidence: 99%

Non-US electrodynamic launchers research and development

Parker¹,

Batteh²,

Greig³

et al. 1994

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“…Today, at the French-German Research Institute of Saint-Louis (ISL) there are pulsed power applications under investigation which handle electric energies up to 10 MJ using spark gaps or silicon based high power semiconductors as switching elements [1]. Since silicon based technology is reaching its physical limits concerning blocking and power handling capability, for compact future military pulsed power systems we are investigating GTO thyristors based on SiC [2,3].…”

Section: Introductionmentioning

confidence: 99%

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Brosselard

Zorngiebel

Planson

et al. 2004

MSF

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4H-SiC asymmetrical gate turn-off (GTO) thyristors have been developed using a PP -NP + epitaxial layer structure, where Pis a 35 µm thick p-type drift layer doped at 5×10 14 cm -3 . The process sequence uses plasma etching steps (ECRRIE) in order to expose inter-digitated devices with a recessed gate structure. Knowing the difficulty in reaching the theoretical forward blocking capability of V b = 6 kV, calculated by numerical simulations using the finite element code MEDICI TM , three different device terminations were realized. The first and simplest termination used is a MESA etched down to 12 µm depth into the drift layer. Better performances were expected by using a combination of mesa and Junction Termination Extension (JTE), where implantation and anneal have to be precisely adjusted. Finally, Etched Guard Ring (EGR) terminations were realized etching five 2 µm wide grooves around the device periphery through the n-base layer. Electrical characteristics of the devices with all the three terminations are presented and discussed. The highest breakover voltage measured for mesa terminated devices reaches 3.9 kV.

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