The application of EUV lithography for 40nm node DRAM device and beyond

We investigate the emissions of atomic potassium excited by two photons near the 4S 1/2 -6S 1/2 transition. Radiation near the 6S 1/2 -4P 3/2,1/2 and 4P 3/2,1/2 -4S 1/2 transitions are studied for the unidirectional and the bidirectional cases, respectively. It is shown that the total output intensity increases considerably for the bidirectional propagation. This is attributed to the effective increase of the Doppler free excitation and the cancellation of the quantum interference effect that is associated with the multiple paths of excitation of certain states.

Section: Introductionmentioning

confidence: 99%

Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

Nakamura¹,

Oda²,

Soda³

et al. 2011

“…Many projects are directed toward that goal. [16][17][18][19] Demonstrating the proof of manufacturability requires lithography integration, which combines the three major lithographic technologies: mask technology, resist technology, and the exposure tool. To do this, we need to verify that devices can actually be fabricated using EUV lithography.…”

Section: Introductionmentioning

confidence: 99%

Application of Extreme Ultraviolet Lithography to Test Chip Fabrication

Tawarayama¹,

Nakajima

Kyoh

et al. 2011

Extreme ultraviolet (EUV) lithography is considered to be the most promising technology for meeting the lithographic challenges posed by the next generation semiconductor design rule beyond a half pitch (hp) of 22 nm. A key area of the Selete EUV program is proof of manufacturability, which means verification of module integration for EUV lithography. To accomplish this, many technologies [e.g., mask, exposure tool, resist, optical proximity correction (OPC)] need to be developed and integrated. In this paper, we discuss the current status of each of them. To verify EUV's manufacturability, we applied EUV to test chip fabrication, metal wiring fabrication, and electrical measurement. The yield number of the hp 28 nm pattern is 70% after improving the resist and the etching process. These results show demonstrate that EUV lithography is a practical technology that is now suitable for semiconductor devices for 2x nm area.

“…Extreme ultraviolet lithography (EUVL) is considered as the most promising technology for mass production of semiconductor devices beyond the 22 nm node. This was made possible by the worldwide cooperation [1][2][3][4][5] of industry consortia, national laboratories, universities, suppliers and device manufacturers. However, many challenges remain for the industry to understand clearly and to overcome before EUVL will be ready for high-volume device manufacture.…”

Section: Introductionmentioning

confidence: 99%

Fluorinated-Polymer Based High Sensitivity Extreme Ultraviolet Resists

Santillan¹,

Yamashita²,

Morita³

et al. 2010

There is a growing interest in the fluorinization of resist materials in improving pattern formation efficiency for extreme ultraviolet (EUV) lithography. The increased polymer absorption coefficient obtained through this resist platform is expected to enhance acid production and in effect improve pattern formation efficiency. Based on this, a EUV resist which was synthesized by co-polymerizing tetrafluoroethelyne (TFE) and functional norbornene derivative was investigated. Relatively high sensitivity of 6.3 mJ·cm-2 for half-pitch (hp) 45 nm and satisfactory resolution limit of hp 40 nm was achieved. However, at present, line width roughness (LWR) was measured at comparatively large values of more than 8.4 nm at hp 45 nm. Further material and process optimizations may be necessary to improve its present lithographic capability. However, these initial results have shown the potential of fluorinated-polymer based platform as a possible solution for high sensitivity, high resolution and low LWR EUV resists.