The anodic evolution of oxygen and chlorine on foreign metal-doped SnO2 film electrodes

Iwakura, Chiaki; Inai, Mizuho; Uemura, T.; Tamura, Hideo

doi:10.1016/0013-4686(81)87038-7

Cited by 32 publications

(15 citation statements)

References 17 publications

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“…SnO 2 films show very little absorbance in the visible IR-range, are very resistant against chemical attack, have high mechanical strength, good electrical conductivity when doped, relatively high hydrogen and oxygen over voltages and can easily be prepared as thin film electrodes. Therefore, SnO 2 films meet the general requirements for dimensionally stable electrode host material [2].…”

Section: Introductionmentioning

confidence: 99%

Sol–gel preparation and characterisation of mixed metal tin oxide thin films

2007

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Section: Introductionmentioning

confidence: 99%

Sol–gel preparation and characterisation of mixed metal tin oxide thin films

2007

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“…With other redox systems of Table I, a space charge layer exists. This behavior could perhaps be a consequence of the two step oxidation reaction for these redox or the result of the low adsorbability of organic compound (28) or I- (29) or SnO~. The influence of a space charge layer cannot, therefore, account for the low heterogeneous rate constant at SnO~/e]ectrolyte interface with HQ and I-.…”

Section: Resultsmentioning

confidence: 99%

Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt Photoanodes

Bélanger

Dodelet

Lombos

1986

J. Electrochem. Soc.

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The photoanode behavior of the solid‐state SIS heterojunction normaln‐normalSi/SiOx/SnO2 is analyzed in aqueous solution with various redox systems [ normalFefalse(CN)64−/3− , I−/I3− , Fe2+/3+ , hydroquinone/benzoquinone, normalFefalse(EDTA)2−/1− , normalFefalse(normalo‐normalphenantroline)2+/3+ ]. The solid‐state device has better performance characteristics than any of the photoelectrochemical systems. Photovoltaic activity is lost in contact with an electrolyte by the presence of charge transfer and diffusion overvoltages. SnO2 stabilizes n‐Si against the photocorrosion but limits the use of performing redox systems to the ones having good charge transfer kinetics at the SnO2/normalelectrolyte interface. In a first section, the charge transfer at normalTi/SnO2 and normalTi/SnO2/normalPt interfaces is determined. For all the redox used, platinization of normalTi/SnO2 increases the heterogeneous rate constant, k0 , between one to two orders of magnitude. A second section deals with the platinization of normaln‐normalSi/SnO2 and its influence upon the J‐V characteristics of the SIS photoanode. It is found that platinization has practically no influence on the J‐V curves when normalFefalse(CN)64−/3− is used. With this redox, the characteristics are mainly affected by the series resistance of the entire cell and by the limiting diffusion currents but not by the charge transfer at the SnO2/normalelectrolyte interface. normalFefalse(EDTA)2−/− or normalFefalse(normalo‐normalphen)2+/3+ which are expected, on the basis of their k0 values to behave like normalFefalse(CN)64−/3− on unplatinized normaln‐normalSi/SnO2 are either not soluble enough or absorbing too much in the visible to yield comparable currents. The most drastic improvement upon platinization is observed with I−/I3− and Fe2+/3+ . The performances of the platinized normaln‐normalSi/SnO2 photoanodes decrease with the elapsed time. It is mainly due to a coalescence of the Pt islands electrodeposited onto SnO2 . The stability is drastically improved for a few cells showing a larger density of smaller Pt islands compared to the typical Pt morphology usually obtained by electrodeposition.

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“…Unless otherwise stated, 10 cycles at 50 mV/s with an initial and final potential of 1.2 V and a switching potential of -0.3 V was used to deposit the film from a solution containing 0.1 mM PdC12, 0.2 mM Na21rC16, 0.2 M KzSO4, and 0.1 M HCI. Integration of the peak areas in a blank solution along with assumptions of about 1 X lo-"' mol/cm2 for one-elkctron transfers led t o an estimate of a 10 monolayer film.…”

Section: Introductionmentioning

confidence: 99%

Oxidation of hydroxide to oxygen at an electrode modified with a film containing palladium and iridium oxides

1990

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Hydroxide is oxidized to oxygen at 0.7 V versus a saturated calomel electrode in a pH 11 solution at a glassy carbon electrode modified with a film containing palladium and iridium oxide. Although this converts to a value that is among the lowest of the reported overpotentials for this reaction, the utility for large-scale electrolyses is limited by the need to periodically reactivate the surface with an acid treatment. The reaction, however, has considerable promise for electroanalytical chemistry. Voltammetric working curves in the millimolar range are linear at slow scan rates; at 40 mV/s, the sensitivity is 241 mA/mol. The current is mass transport limited at a rotating disk electrode. A general mechanism, proposed in part on the basis of a Tafel plot, is presented.

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The anodic evolution of oxygen and chlorine on foreign metal-doped SnO2 film electrodes

Cited by 32 publications

References 17 publications

Sol–gel preparation and characterisation of mixed metal tin oxide thin films

Sol–gel preparation and characterisation of mixed metal tin oxide thin films

Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt Photoanodes

Oxidation of hydroxide to oxygen at an electrode modified with a film containing palladium and iridium oxides

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