The Andreev conductance in superconductor–insulator–normal metal structures

Seliverstov, Aleksandr; Tarasov, M.; Édelman, V. S.

doi:10.1134/s1063776117030153

Cited by 9 publications

(6 citation statements)

References 25 publications

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“…At V/VΔ<0.3 obtained Te values slightly differ, which does not affect the results. But at low voltages there is a qualitative difference -the differential conductivity according to formula (4) changes linearly, which corresponds to experiment [17,18]. Equation ( 5) is similar to the calculation of Andreev current in [19].…”

Section: W II Experimentalmentioning

confidence: 79%

“…Therefore, the single-electron current of the ideal NIS junction according to formula (3) at low voltages is only a small fraction of the total current, the contribution to which can due to the subgap Andreev current In+Is [13,16]. In the case of electrons scattering by magnetic ions, as established in [16,17], In is near zero and Is can be presented as…”

Section: W II Experimentalmentioning

confidence: 99%

“…This formula valid for (ħD/E) 1/2 <<L, where L~1µm is the lateral size of the junction, D -diffusion coefficient. For Al films D~50 cm 2 /s [17]. As well as Dynes current IDy [5], that is usually attributed to smearing of the superconductor energy gap:…”

Section: W II Experimentalmentioning

confidence: 99%

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Electron-Phonon Interaction in Aluminum SINIS

Lemzyakov¹,

Tarasov

Édelman³

2022

IEEE Trans. Appl. Supercond.

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A detailed analysis of power flow in superconductorinsulator-normal metal-insulator-superconductor (SINIS) structures with aluminum superconducting electrodes and normal metal absorber made of aluminum with suppressed superconductivity is carried out. From a comparison with the experimental results of measuring the current-voltage characteristics at temperatures from 0.087 K to 0.3 K, it was concluded that the power of the electron-phonon interaction is proportional to the difference of sixth powers of the electron and phonon temperatures. The previously applied relation with the difference of fifth powers leads to an almost twofold error in determining the power of the electron-phonon interaction and an estimate of the electron temperature that is underestimated by about 40 mK.

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Section: W II Experimentalmentioning

confidence: 79%

Section: W II Experimentalmentioning

confidence: 99%

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Electron-Phonon Interaction in Aluminum SINIS

Lemzyakov¹,

Tarasov

Édelman³

2022

IEEE Trans. Appl. Supercond.

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“…with three fitting parameters that should be selected from experiment [12]. An alternative approach is the Dynes model [13].…”

Section: Influence Of Permanent Magnetic Field On Conductivity Of Nis Junctionsmentioning

confidence: 99%

Fabrication of NIS and SIS Nanojunctions with Aluminum Electrodes and Studies of Magnetic Field Influence on IV Curves

et al. 2021

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Samples of superconductor–insulator–superconductor (SIS) and normal metal–insulator–superconductor (NIS) junctions with superconducting aluminum of different thickness were fabricated and experimentally studied, starting from conventional shadow evaporation with a suspended resist bridge. We also developed alternative fabrication by magnetron sputtering with two-step direct e-beam patterning. We compared Al film grain size, surface roughness, resistivity deposited by thermal evaporation and magnetron sputtering. The best-quality NIS junctions with large superconducting electrodes approached a resistance R(0)/R(V2Δ) factor ratio of 1000 at 0.3 K and over 10,000 at 0.1 K. At 0.1 K, R(0) was determined completely by the Andreev current. The contribution of the single-electron current dominated at V > VΔ/2. The single-electron resistance extrapolated to V = 0 exceeded the resistance R(V2Δ) by 3 × 109. We measured the influence of the magnetic field on NIS junctions and described the mechanism of additional conductivity due to induced Abrikosov vortices. The modified shape of the SINIS bolometer IV curve was explained by Joule overheating via NIN (normal metal–insulator–normal metal) channels.

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“…5. IV curves of suspended Pd bolometer measured at 0.1 K and 0.16 K (red and blue), with and without radiation, and calculated for 0.179 K and 0.161 K IV curves of suspended SINIS bolometer with Cu absorber at 350 GHz irradiation measured at 0.1 K and comparison with calculation accounting for Andreev's current according to [26] presented in Fig. 5.…”

Section: B Suspended Bolometermentioning

confidence: 99%

Non-Thermal Absorption and Quantum Efficiency of SINIS Bolometer

Tarasov

Gunbina

Yusupov

et al. 2021

IEEE Trans. Appl. Supercond.

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We study mechanisms of absorption in two essentially different types of superconductor-insulator-normal metalinsulator-superconductor (SINIS) bolometers with absorber directly placed on Si wafer and with absorber suspended above the substrate. The figure of merit for quantum photon absorption is quantum efficiency equal to the number of detected electrons for one photon. The efficiency of absorption is dramatically dependent on phonon losses to substrate and electrodes, and electron energy losses to electrodes through tunnel junctions. The maximum quantum efficiency can approach n=hf/kT=160 at f=350 GHz T=0.1 K, and current responsivity dI/dP=e/kT in quantum gain bolometer case, contrary to photon counter mode with quantum efficiency of n=1 and responsivity dI/dP=e/hf. In experiments, we approach intrinsic quantum efficiency up to n=80 electrons per photon in bolometer with suspended absorber, contrary to quantum efficiency of about one for absorber on the substrate. In the case of suspended Cu and Pd absorber, Kapitsa resistance protect from power leak to Al electrodes.

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The Andreev conductance in superconductor–insulator–normal metal structures

Cited by 9 publications

References 25 publications

Electron-Phonon Interaction in Aluminum SINIS

Electron-Phonon Interaction in Aluminum SINIS

Fabrication of NIS and SIS Nanojunctions with Aluminum Electrodes and Studies of Magnetic Field Influence on IV Curves

Non-Thermal Absorption and Quantum Efficiency of SINIS Bolometer

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