The all boron carbide diode neutron detector: Comparison with theory

Caruso, Anthony N.; Dowben, Peter A.; Balkir, S.; Schemm, Nathan; Osberg, K.; Fairchild, Robert W.; Flores, Oscar Barrios; Balaz, Snjezana; Harken, Andrew; Robertson, B. W.; Brand, Jennifer

doi:10.1016/j.mseb.2006.08.049

Cited by 111 publications

(63 citation statements)

References 33 publications

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“…The neutron detector using semiconductor material like boron carbide (BC) or microstructured Si substrate was proposed and developed. [10][11][12] Such neutron detection devices require a high-quality pn diode property, the material selection of neutron capture cross section, and the selection of semiconductor material for low γ -ray detection sensitivity.…”

confidence: 99%

Neutron detection using boron gallium nitride semiconductor material

Atsumi¹,

Inoue²,

Mimura³

et al. 2014

APL Materials

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In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

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confidence: 99%

Neutron detection using boron gallium nitride semiconductor material

Atsumi¹,

Inoue²,

Mimura³

et al. 2014

APL Materials

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“…The ability to generate semiconducting grades of boron carbide by plasma enhanced chemical vapour deposition (PECVD) of carboranes permits the development of corrosion resistant, high temperature devices with many applications including neutron detection [6][7][8][9][10][11][12][13][14]. This PECVD based semiconducting boron carbide has been used to fabricate heterojunction diodes with silicon [6-10, 15, 16], silicon carbide [17] and other semiconducting boron carbides (making these devices all boron carbide devices) [11,13,14,18] and a boron carbide transistor [19]. Boron carbide homojunctions have been fabricated by PECVD of carboranes, with nickel doping [20,21], cobalt doping [22] and iron doping [23], as indicated in figure 1.…”

Section: Introductionmentioning

confidence: 99%

The local structure of transition metal doped semiconducting boron carbides

Liu

Luo

Mei

et al. 2010

J. Phys. D: Appl. Phys.

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Brand, Jennifer I.; and Dowben, Peter A., "The local structure of transition metal doped semiconducting boron carbides" (2010 Abstract Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orthocarborane (closo-1,2-C 2 B 10 H 12 ) and 3d metal metallocenes were investigated by performing K-edge extended x-ray absorption fine structure and x-ray absorption near edge structure measurements. The 3d transition metal atom occupies one of the icosahedral boron or carbon atomic sites within the icosahedral cage. Good agreement was obtained between experiment and models for Mn, Fe and Co doping, based on the model structures of two adjoined vertex sharing carborane cages, each containing a transition metal. The local spin configurations of all the 3d transition metal doped boron carbides, Ti through Cu, are compared using cluster and/or icosahedral chain calculations, where the latter have periodic boundary conditions.

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“…%) shows higher percentage of neutron reduction which shows that the maximum for composite with 8 wt% of B 4 C was 25.4% neutron reduction. The presence of isotope B 10 in B 4 C ceramic particles play a role neutron absorb because it has high neutron cross section of 760 barns [3,13]. The reaction that occurs during capturing the neutron was as follow: 10 B + 1 n  7 Li+ 4 He + 2.4 MeV (2) The heat treated composites also seem have higher percentage of neutron reduction compared to as cast composites because the homogeneity of the composites increased due to the heat treatment.…”

Section: Methodsmentioning

confidence: 99%

Neutron absorption of Al-Si-Mg-B4C composite

Abdullah¹,

Ibrahim²,

Daud³

et al. 2016

AIP Conference Proceedings

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Abstract. Al-Si-Mg-B4C composites containing 2-8 wt% of B4C were prepared by stir casting technique. Homogenization treatment was carried out at temperatures of 540 o C for 4 houra and followed by ageing at 180 o C for 2 houra. Microstructure and phase identification were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD) respectively. Neutron absorption study was investigated using neutron source Am/Be 241 . The result indicated that higher B4C content improved the neutron absorption property. Meanwhile homogeneity of the composite was increased by ageing processes. This composite is potential to be used as neutron shielding material especially for nuclear reactor application.

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The all boron carbide diode neutron detector: Comparison with theory

Cited by 111 publications

References 33 publications

Neutron detection using boron gallium nitride semiconductor material

Neutron detection using boron gallium nitride semiconductor material

The local structure of transition metal doped semiconducting boron carbides

Neutron absorption of Al-Si-Mg-B4C composite

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