The advantages of nanoimprint lithography for semiconductor device manufacturing

Asano, Toshiya; Sakai, Keita; Yamamoto, Kazuhisa; Hiura, Hiromi; Nakayama, Takahiro; Hayashi, Tomohiko; Takabayashi, Yukio; Iwanaga, Takehiko; Resnick, Douglas J.

doi:10.1117/12.2532522

Cited by 4 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4][5] NIL is also attracting attention as a green lithography technology as it requires much less power consumption than other lithography techniques, and does not require chemical developing solutions because of the absence of development processes. 6,7) The application of NIL to NAND flash memory fabrication is under consideration, and the fabrication techniques are progressing on memory patterns with a minimum half-pitch of 14 nm, e.g. memory cells and contact holes.…”

Section: Introductionmentioning

confidence: 99%

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Suzuki,

Youn,

Ueda

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Nanoimprint lithography (NIL) is promising for processing of dual damascene structures fabricated in back-end-of-line layers and initial development began with a simple single-level process to evaluate NIL’s suitability. In this work, test element group (TEG) pattern with a 70 nm half-pitch was selected, and copper filling and chemical-mechanical polishing were performed after NIL pattern transfer. The results were compared with those obtained from the same TEG layout and processes except using ArF immersion lithography instead of NIL. Those obtained by NIL showed high pattern fidelity for all designed layouts, whereas the resist patterns varied from the designed shape for ArF immersion lithography. The line resistances of Cu interconnects patterned by NIL showed good cumulative distributions at linewidths ranging from 60 nm to 78 nm in 2 nm increments without line breaks or space narrowing of SiO2. NIL showed potential for interconnect patterning with high-precision linewidth control.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Suzuki,

Youn,

Ueda

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Nanoimprint lithography (NIL) is a simple nanopatterning technique that can be performed without use of large-scale projection optics such as semiconductor scanners [1][2][3][4][5] . NIL is also attracting attention as a green lithography technology because it requires much lower power consumption than other lithographic techniques and it does not require chemical developing solutions because it does not involve development processes 6,7 . Application of NIL to NAND flash memory fabrication is currently under consideration and the development of the required fabrication techniques is progressing for memory patterns with a minimum half-pitch (HP) of 14 nm, e.g., memory cells and contact holes 8 .…”

Section: Introductionmentioning

confidence: 99%

Open/short-TEG evaluation of 24nm-half-pitch-W damascene interconnects based on nanoimprint lithography

Suzuki,

Ueda,

Hiroshima

et al. 2024

Novel Patterning Technologies 2024

View full text Add to dashboard Cite

Nanoimprint lithography (NIL) is regarded as a promising technique for application to fabrication of the dual damascene structures that are commonly fabricated in back-end-of-line layers. Initial development work has commenced with a simple single-level process to evaluate the suitability of NIL for back-end processing applications. In this work, a test pattern with a minimum half-pitch of 24 nm was patterned using NIL, and W damascene interconnects were then fabricated via a combination of W deposition followed by chemical mechanical polishing. The electrical performances of the test devices were subsequently evaluated using the open/short test element group. The line resistances and leakage currents of the W interconnect structures fabricated using NIL showed good cumulative distributions at the designed minimum linewidth of 24 nm. We also demonstrated that a diagonal zigzag capacitor pattern with a pattern size of 2X nm showed good electrical properties.

show abstract

Top-Down Fabrication of Chemical and Biological Sensors

Kang,

Cho,

Park

et al. 2024

Acc. Mater. Res.

View full text Add to dashboard Cite

The advantages of nanoimprint lithography for semiconductor device manufacturing

Cited by 4 publications

References 4 publications

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Open/short-TEG evaluation of 24nm-half-pitch-W damascene interconnects based on nanoimprint lithography

Top-Down Fabrication of Chemical and Biological Sensors

Contact Info

Product

Resources

About