The adsorption behaviour of O2 on the clean Si(110) surface in the early stage

Abstract

This Letter reports on the early stage of adsorption of 02 on the clean Si(ll0) surface, showing a prominent 5 • reconstruction, in ultrahigh vacuum at 300 K, Auger electron spectroscopy (AES) and tow energy electron diffraction (LEED) have been used to monitor this solid-gas reaction. Careful measurements of the normalized oxygen Auger signal in the low exposure region reveal, for the first time, a remarkably fast adsorption of 02 up to -0.15 monolayer of oxygen, the initial sticking probability being about 1, The LEED measurements suggest that those surface sites which constitute the additional higher order reconstructions, are highly reactive.

Decomposition of N2O on the Si(100)2×1 and Si(111)7×7 surfaces: Determination of the density of broken bonds

“…This approach has also been successfully applied to the Si(110)5 X 1 surface [11,12,28,29], for which we found a reduction in dangling bond density (using the Si(100)2 x 1 surface as reference) of the same order of magnitude as for the Si(111)7 x 7 surface. This result is in favour of the idea that adatom-like structures exist at the reconstructed Si(ll0) surface, as proposed by the authors of a recent scanning tunneling microscopy (STM) study [30].…”