The accounting of the simultaneous exposure of the low temperatures and the penetrating radiation at the circuit simulation of the BiJFET analog interfaces of the sensors

Dvornikov, O.; Dziatlau, V. L.; Prokopenko, N. N.; Petrosiants, K. O.; Kozhukhov, N. V.; Tchekhovski, Vladimir A.

doi:10.1109/sibcon.2017.7998507

Cited by 32 publications

(6 citation statements)

References 3 publications

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“…The developed models enable us to describe the existing manufacturing tolerance of the cutoff voltage V TH by changing the parameter VTOValue, the spread of the β -by changing the BFscale parameter, the effect of the absorbed dose of gamma radiation and the neutron flux by parameters of the D G and F N model, respectively. The use of these means ensured satisfactory coincidence of the results of measurement and simulation of CVC of the BJT and JFET at the temperature T up to −197°С [26].…”

Section: Glass Of Ice Watermentioning

confidence: 85%

“…Based on the experimental data obtained (Figs. 2 − 6), transistor models were modified to simultaneously account for the effect of low temperatures and penetrating radiation [26]. The developed models enable us to describe the existing manufacturing tolerance of the cutoff voltage V TH by changing the parameter VTOValue, the spread of the β -by changing the BFscale parameter, the effect of the absorbed dose of gamma radiation and the neutron flux by parameters of the D G and F N model, respectively.…”

Section: Glass Of Ice Watermentioning

confidence: 99%

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Design of low-temperature DDOAs on the elements of BiJFet array chip MH2XA030

Dvornikov¹,

Tchekhovski

Dziatlau

et al. 2018

Serb J Electr Eng

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Brief information about the new BiJFet array chip (AC) MH2XA030 intended for accelerated creation of analog integrated circuits (IC), which retain their performance under the influence of penetrating radiation and extremely low temperatures (up to minus 197 °С) is presented. The features of schematic design of two types of DDOAs (OAmp3, OAmp4) are considered. The recommendations on the schematic design of the DDOA are developed taking into account the static characteristics of the field effect and bipolar transistors of the AC under the influence of low temperatures. The amplitude-frequency response of the DDOA and the dependence of the noise voltage on the frequency of Fourier density are given. At a temperature of-197°С cryogenic amplifiers OAmp3 (OAmp4) are characterized by the following parameters: the current consumption is less than 500 μA, the input current is less than 1 fA, the voltage gain is more than 50.000 (200.000), the offset voltage is less than 200 (60) μV. The results of the circuit simulation of the instrumentation amplifier based on DDOA OAmp3 are presented.

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Section: Glass Of Ice Watermentioning

confidence: 85%

Section: Glass Of Ice Watermentioning

confidence: 99%

Design of low-temperature DDOAs on the elements of BiJFet array chip MH2XA030

Dvornikov¹,

Tchekhovski

Dziatlau

et al. 2018

Serb J Electr Eng

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“…In Figure 6 and Figure 7 shows two proposed [18][19] circuit modifications of the VF with small V off , which made on complementary field-effect transistors with a control pn-junction and provide a low noise level, including when operating in the low temperature range. Consider the work of the VF (Figure 7) taking into account the results of modeling its characteristics shown in Figure 8 -Figure 12.…”

Section: Low-temperature and Radiation-resistant Voltage Follower On Complementary Field-effect Transistors With A Control P-n Junctionmentioning

confidence: 99%

Voltage Followers for the Design of Sallen-Key Active Rc-Filters

Chumakov¹,

Pakhomov²,

Titov³

et al. 2021

Preprint

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In this paper consider the circuitry of voltage followers (VF) with unity-gain, intended for practical use in active Sallen-Key RC-filters (LPF, HPF, BPF, RF). The results of research and computer modeling of radiation-resistant and low-temperature VF in the LTSpice environment on models of CJFET transistors operating under the influence of neutron flux up to 10e14 n/cm2 and cryogenic temperatures up to -197°C are presented.

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“…Известно [12], что не все коммерческие САПР и фирменные библиотеки Spice-параметров моделей транзисторов пригодны для схемотехнического моделирования влияния проникающей радиации и криогенной температуры на параметры аналоговых микросхем. Для одновременного учета влияния радиации и низких температур предложено применение САПР LTSpice, встроенных в LTSpice типовых моделей с усредненными температурными коэффициентами, а также разработанные математические выражения [12], устанавливающие взаимосвязь параметров моделей, полупроводника и радиационного облучения и описывающие немонотонное изменение параметра BETA p-ПТП [12]. Разработанные модели позволяют также описать существующий технологический разброс напряжения отсечки V TH путем изменения параметра VTOValue, разброс βизменением параметра BFscale, влияние поглощенной дозы гамма-излучения и потока нейтронов параметрами модели DG и FN, соответственно.…”

Section: средства схемотехнического проектированияunclassified

“…Ранее КН были разработаны для микросхем базового структурного кристалла (БСК) [3] МН2ХА010 [4][5][6] и БМК АБМК-2.1 [4,7], обеспечивающих высокий уровень электрических параметров полузаказных ИС [8,9]. Исследования [10][11][12][13][14][15][16][17]…”

Section: Introductionunclassified