The (3$\times$3)-SiC-($\bar{1}\bar{1}\bar{1}$) Reconstruction: Atomic Structure of the Graphene Precursor Surface from a Large-Scale First-Principles Structure Search
Jan Kloppenburg,
Lydia Nemec,
Björn Lange
et al.
Abstract:Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high quality epitaxial graphene. On the carbon face (the ( 111 ) or (000 1) face, depending on the polytype), the onset of graphene growth is intertwined with the formation of several competing surface phases, among them a (3×3) precursor phase suspected to hinder the onset of controlled, near-equilibrium growth of graphene. Despite more than two decades of research, the precise atomic structure of this phase is still u… Show more
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