The 1100 °C isothermal section of the Ti-Ni-Si ternary system

Hu, Xiaohua; Chen, G.; Ion, Cinca; Ni, Kequan

doi:10.1361/105497199770340761

Cited by 24 publications

(30 citation statements)

References 5 publications

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“…In figure 5(b), the Ib/Ia ratio remains constant reflecting no dependence of the SiC crystallinity on the Ni content. The large scatter at the Ni content of 0.5 for various total metal contents might be due to the existence of a refractory phase such as Ni 4 Si 7 Ti 6 around the Ni : Ti = 50 : 50 composition, making the liquid phase unstable at this process temperature [10]. This is an advantage of the thin-film combinatorial method, where these phenomena can be detected continuously throughout vastly varying compositions, compared with the conventional bulk growth.…”

Section: Resultsmentioning

confidence: 99%

Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Yonezawa

Rais‐Zadeh

Takigawa

et al. 2011

Science and Technology of Advanced Materials

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Abstract4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux has been investigated. A combinatorial approach was employed to accelerate the screening of metal flux for the SiC solution growth.

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Section: Resultsmentioning

confidence: 99%

Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Yonezawa

Rais‐Zadeh

Takigawa

et al. 2011

Science and Technology of Advanced Materials

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“…A thermodynamic analysis of the Ni-Si-Ti ternary system was carried out by combining the available experimental data C. 43) on the phase equilibria, and the results obtained from ab initio calculations. The results are summarized as follows:…”

Section: Discussionmentioning

confidence: 99%

“…In the Ni-Si-Ti ternary system, the isothermal sections have been reported at 750 C, 1000 C, and 1100 C over the entire composition range by Markiv et al, 41) Westbrook et al, 42) and Hu et al, 43) respectively. Williams 44) provided some modification for the Ni corner of the 1000 C isotherm.…”

Section: Ni-si-ti Ternary Systemmentioning

confidence: 95%

“…4, together with the experimental isothermal section. 43) When calculating the isothermal section diagram, the Ti 3 Si phase was not taken into account, because in practice, the Ti 3 Si phase only forms after lengthy anneals at high temperatures, and the Ti 5 Si 3 phase is formed instead. In reality, the Ti 3 Si phase has not been confirmed in the experimental ternary isothermal section.…”

Section: Ni-si-ti Ternary Systemmentioning

confidence: 99%

“…In reality, the Ti 3 Si phase has not been confirmed in the experimental ternary isothermal section. [41][42][43] In Fig. 5, the calculated isothermal section at 750 C is compared with the experimental result given by Markiv et al Figure 6 shows a comparison of the calculated isothermal section diagram in the Ni-rich region with the homogeneity region of the Ni 3 Si( 1 ) phase reported by Li et al 46) The calculated solubility of Ti in the Ni 3 Si( 1 ) phase is rather lower than the experimental result, at 17.0 mol%Ti, and such a large solubility could not be reproduced simultaneously with the phase equilibria at 750 C and 1100 C. Although there is no experimental information on the liquidus temperatures for comparison, the calculated liquidus surface projection of the Ni-Si-Ti system is shown in Fig.…”

Section: Ni-si-ti Ternary Systemmentioning

confidence: 99%

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Thermodynamic Analysis of the Ni-Si-Ti System Using Thermochemical Properties Determined from Ab Initio Calculations

et al. 2004

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A thermodynamic analysis has been carried out on the Ni-Si-Ti ternary system using the CALPHAD method. A regular solution approximation based on the sublattice model was adopted to describe the Gibbs energy for the individual phases in the binary and ternary systems. The thermodynamic parameters for each phase were evaluated using available experimental data on the phase boundaries and other related thermochemical properties. In addition to the experimental data, the enthalpy of formation for some binary and ternary compound phases as determined by ab initio calculations was incorporated in the present analysis. There was good agreement between the calculated and the experimental phase equilibria in the binary and ternary systems.

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The Ternary System Nickel/Silicon/Titanium Revisited

Weitzer

Naka

Krendelsberger

et al. 2010

Zeitschrift anorg allge chemie

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The constitution of the ternary system Ni/Si/Ti is investigated over the entire composition range using X‐ray diffraction (XRD), energy dispersive X‐ray spectroscopy (EDS), differential thermal analysis (DTA), and metallography. The solid state phase equilibria are determined for 900 °C. Eight ternary phases are found to be stable. The crystal structures for the phases τ1NiSiTi, τ2Ni4Si7Ti4, τ3Ni40Si31Ti13, τ4Ni17Si7Ti6, and τ5Ni3SiTi2 are corroborated. For the remaining phases the compositions are determined as Ni6Si41Ti53 (τ6), Ni16Si42Ti42(τ7), and Ni12Si45Ti43 (τ8). The reaction scheme linking the solid state equilibria with the liquidus surface is amended to account for these newly observed phases. The discrepancies between previous experimental conclusions and modeling results are addressed. The liquidus surface is dominated by the primary crystallisation field of τ1NiSiTi, the only congruently melting phase.

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The 1100 °C isothermal section of the Ti-Ni-Si ternary system

Cited by 24 publications

References 5 publications

Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Thermodynamic Analysis of the Ni-Si-Ti System Using Thermochemical Properties Determined from Ab Initio Calculations

The Ternary System Nickel/Silicon/Titanium Revisited

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