TFT Compact Modeling

Cheng, Xiang; Lee, Sungwon; Yao, Guangyu; Nathan, Arokia

doi:10.1109/jdt.2016.2556980

Cited by 25 publications

(17 citation statements)

References 33 publications

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“…For the large variations in OTFT materials and structures, further modeling efforts have been devoted to the capability of rearrangement and flexibility for capturing the essence in the behaviors of various OTFTs in a consistent and relatively simple way, and allowing for easier implementation, modifications, and parameter extraction [128], [136]. These developed models can be conveniently implemented into commercial circuit simulator for circuit simulation using Verilog-A, which, however, is slower and less efficient than a well-developed SPICE model [137]. Currently, the only OTFT SPICE model available in commercial circuit simulator is the universal OTFT (UOTFT) model in SmartSPICE, which combines the robust concepts of universal charge-based FET modeling with OTFT specific charge, mobility and contact resistance bias, and temperature dependence [138].…”

Section: Device Modeling and Circuit Designmentioning

confidence: 99%

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Guo

Ogier³

et al. 2017

IEEE Trans. Electron Devices

234

162

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-Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.

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Section: Device Modeling and Circuit Designmentioning

confidence: 99%

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Guo

Ogier³

et al. 2017

IEEE Trans. Electron Devices

234

162

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“…In this study, a simple n‐type load resistive standard ternary inverter (STI) is used as an example of a ternary logic unit. The semi‐empirical model for ZnO TTFT consists of two TFT compact models connected in parallel, and each TFT compact model is expressed by the following Equation (): [ 24 ]

\begin{matrix} I_{DS} = G_{o} (\frac{W}{L}) \exp (κ {(V_{GS} - V_{FB})}^{α}) V_{DS} + I_{off} \end{matrix}

where W and L are the width and the length of the channel, respectively; I off is the off‐current of TFT; V FB is the gate voltage ( V GS ) at which the drain current ( I DS ) starts to increase rapidly; G 0 is a parameter related to the mobility of the TFT, and κ and α are related to the trap states. The three primary fitting parameters are G 0 , κ , and α.…”

Section: Resultsmentioning

confidence: 99%

“…In this study, a simple n-type load resistive standard ternary inverter (STI) is used as an example of a ternary logic unit. The semiempirical model for ZnO TTFT consists of two TFT compact models connected in parallel, and each TFT compact model is expressed by the following Equation (3): [24]…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Operation Principles of ZnO/Al₂O₃‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor

Kim

et al. 2021

Adv Elect Materials

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For many decades, novel devices demonstrating step‐wise current–voltage characteristic at room temperature have been pursued to realize multi‐valued logic computing that has significant advantages such as extremely low power consumption and high‐density information‐processing capability. Recently, a novel ternary logic transistor has been constructed using an ultrathin ZnO/Al2O3‐AlDMP/ZnO channel exhibiting a mobility edge‐quantized conduction for the intermediate current level. This study investigates the operation principle of the ternary device using ZnO/Al2O3‐AlDMP/ZnO stack and concludes that the first ZnO layer controls the level of the intermediate current, while the second ZnO layer controls the threshold voltage of the ternary device. These controllable electrical properties of the intermediate state of the ternary device have been applied to an n‐type resistive‐load standard ternary inverter, demonstrating the feasibility to achieve a ternary logic circuit consuming extremely low power with an optimal noise margin.

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“…where α is the power law coefficient in the TFT model (α = 0 for the case of MOSFET) [55], [185]. As seen in Fig.…”

Section: ) Transconductance and Transconductance Efficiencymentioning

confidence: 99%

Flexible Ultralow-Power Sensor Interfaces for E-Skin

2019

Self Cite

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Thin-film electronics has hugely benefitted from low-cost processes, large-area processability, and multi-functionality. This has not only stimulated innovation in display and sensor technology, but has also demonstrated great potential for integration of components for human-machine interfaces. For electronics to be deployed as sensor interfaces and signal processing, the quest for low power is compelling due to the inherently limited battery lifetime. This review will present the state-of-the-art in thin film electronics and demonstrate examples of low-cost printable transistors and biosensors that are flexible/stretchable for wearable and other applications. Ultralow power design for thin-film transistors will be discussed from the standpoint of reducing both operating voltage and operating current, taking into account the challenges in meeting frequency requirements. Compact models for circuit design will be reviewed along with new insights into ultralow power transistors and high gain amplifier circuits. Finally, a concept for an integrated system comprising sensors and interfacing circuits will be demonstrated, which has the potential to enable battery-less operation.

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TFT Compact Modeling

Cited by 25 publications

References 33 publications

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Operation Principles of ZnO/Al₂O₃‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor

Flexible Ultralow-Power Sensor Interfaces for E-Skin

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TFT Compact Modeling

Cited by 25 publications

References 33 publications

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Operation Principles of ZnO/Al2O3‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor

Flexible Ultralow-Power Sensor Interfaces for E-Skin

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Product

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Operation Principles of ZnO/Al₂O₃‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor