TFT Backplane Technologies for AMLCD and AMOLED Applications

Choi, Jae Beom; Chang, Young Jin; Park, Cheol Ho; Choi, Beom Rak; Kim, Hyo Seok; Park, KeeChan

doi:10.3938/jkps.54.549

Cited by 11 publications

(6 citation statements)

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“…The fabrication details of the devices can be found elsewhere. [10][11][12] The a-IGZO channel layer deposited by RF sputtering were charachterized chemically by X-ray photoelectron spectroscopy (XPS). The measurements were carried out by using NEXSA XP10 model at 1.4 K eV energy and the curve were further fitted by the guassian methos to analyse the chemcial state of the a-IGZO films.…”

Section: Device and Measurement Detailsmentioning

confidence: 99%

Analysis of Negative Bias Illumination Stress Induced Effect on LTPS and a-IGZO TFT

Agrawal

Patil

Cho

et al. 2020

ECS J. Solid State Sci. Technol.

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The LTPS and IGZO were the two possible options for next generation displays with its own advantages and disadvantages. In terms of reliability, the LTPS TFT offers the superior threshold voltage stability as compare to the IGZO TFT under the gate bias stress. However, the continuing scaling of the LTPS and IGZO limits the electrical performance at higher voltages. LTPS and IGZO TFT still retains the reliability issues at smaller device dimensions. Therefore, the negative bias stress instability in a-IGZO and LTPS TFT having similar device dimension (width × length) has been investigated and compared. The negative bias stress without illumination shows the good thermal stability and no threshold voltage change in the LTPS TFT. However, under illumination (NBIS), the asymmetrical degradation in the LTPS TFT was observed, shows the degradation in off current (IOFF) almost by two order (10−11 A) due to self-heating effects. Whereas, the NBIS on a-IGZO TFT shows the positive shift in the threshold voltage (ΔVth = 2.71 V), due to the double donor state within a-IGZO and gate insulator. It is noticed that, the LTPS and a-IGZO TFT show different photo-generated carrier behavior under NBIS, which may limit the performance for future CMOS device at smaller dimensions.

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Section: Device and Measurement Detailsmentioning

confidence: 99%

Analysis of Negative Bias Illumination Stress Induced Effect on LTPS and a-IGZO TFT

Agrawal

Patil

Cho

et al. 2020

ECS J. Solid State Sci. Technol.

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show abstract

“…However, it is difficult to obtain large area electronic applications and the manufacturing costs are expensive. 2 An alternative material, which leads * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents

Kim¹,

Jang²,

Phu³

et al. 2016

j nanosci nanotechnol

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Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content.

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“…Recently, active matrix organic light emitting diode (AMOLED) displays driven by low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have become the hottest topic in display panel for mobile phones, due to the higher mobility and better stability of LTPS TFTs than the amorphous silicon based counterparts [1]. Most of the commercialized AMOLED products utilize TFTs based on expensive laser crystallization technologies, such as excimer laser annealed (ELA) [2], sequential lateral solidification (SLS) [3,4] for the lower defect density in the laser crystallized film allows better device performance in terms of the field effective mobility (µ FE ), threshold voltage (V th ), subthreshold swing (SS). While the electrical performance of LTPS TFT being improved continuously, the device uniformity is becoming the critical issue for the application of LTPS TFTs in AMOLED displays [3].…”

Section: Introductionmentioning

confidence: 99%

“…Solid phase crystallization (SPC) is the simplest and most direct method to get poly-Si with high uniformity over large area [9]. With our previously reported bridged-grain (BG) technique, the µ FE and on-off ratio of SPC TFTs have been greatly improved to be qualified for AMOLED applications.…”

Section: Introductionmentioning

confidence: 99%

P.5: High Uniformity Solid Phase Crystallized Bridged‐Grain Polycrystalline Silicon Thin Film Transistors

Zhou

Chen

Zhao

et al. 2013

Symp Digest of Tech Papers

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TFT Backplane Technologies for AMLCD and AMOLED Applications

Cited by 11 publications

References 0 publications

Analysis of Negative Bias Illumination Stress Induced Effect on LTPS and a-IGZO TFT

Analysis of Negative Bias Illumination Stress Induced Effect on LTPS and a-IGZO TFT

Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents

P.5: High Uniformity Solid Phase Crystallized Bridged‐Grain Polycrystalline Silicon Thin Film Transistors

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