Texturized interface as a basis of surface-barrier heterostructure for solar cells application

Dmitruk, N. L.; Borkovskaya, O. Yu.; Mamontova, I.B.; Mamykin, S.V.

doi:10.1016/s0927-0248(99)00090-2

Cited by 19 publications

(12 citation statements)

References 9 publications

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“…case of flat surface and essentially depends on rough interface correlation. This is in agreement with the experimental data for nearly smooth (nanorough) surfaces [7].…”

Section: Rough Nanorelief Influencesupporting

confidence: 92%

Influence of correlation between interface profiles of thin absorptive films on light transmission

Коровин

Dmitruk

2008

Materials Science and Engineering: B

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“…case of flat surface and essentially depends on rough interface correlation. This is in agreement with the experimental data for nearly smooth (nanorough) surfaces [7].…”

Section: Rough Nanorelief Influencesupporting

confidence: 92%

Influence of correlation between interface profiles of thin absorptive films on light transmission

Коровин

Dmitruk

2008

Materials Science and Engineering: B

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“…GaAs surface microreliefs of quasi-grating and dendrite types were prepared using the wet chemical anisotropic etching [9]. Highly purified SWCNTs were produced using the arc-discharge method.…”

Section: Methodsmentioning

confidence: 99%

Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface

Dmitruk¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The effect of single-wall carbon nanotubes nanolayer on photoelectric properties of Au/n-GaAs photovoltaic structure with a microrelief interface has been investigated. Microrelief interfaces of dendrite-like and quasi-grating type aimed at enhancement of photocurrent have been prepared by the wet chemical anisotropic etching of GaAs. Carbon nanotubes obtained using the arc-discharge method were deposited on GaAs surface modified with poly(vinylpyridine) by dip-coating repeated several times. Optical, photoelectric and electrical properties of Au/GaAs structures have been studied in dependence on the averaged thickness of nanotubes nanolayer. Considerable photocurrent enhancement has been determined for structures with both the flat and textured interface but with a different optimal thickness of nanotubes layer. The effect was concluded to be caused by increasing the lateral photocurrent component due to enlargement of the current collection area and increase of the light trapping.

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“…The spectral dependence of the short circuit photocurrent density per photon absorbed in semiconductor (internal quantum efficiency Q i ) [10] under simplified assumptions (I 1 = I 2 = 0, V n = ∞) may be described by the expression…”

Section: Photoelectric Characteristicsmentioning

confidence: 99%

Fluctuation model for a rough metal/semiconductor interface

Dmitruk

Borkovskaya

Horváth

et al. 2003

phys. stat. sol. (c)

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The fluctuation model with Gaussian-type of barrier heights distribution that was recently applied successfully to explain the dark current -voltage characteristics of Au/GaAs barrier structure with microrelief interface, in this paper is extended to photoelectric characteristics. In addition to the change of the Richardson constant and the apparent temperature coefficient of barrier height we predict the decrease of the open-circuit voltage of photodetectors or solar cells. The theoretical predictions have been verified experimentally on the Au/GaAs Schottky barriers with dendrite-like or quasigrating interface prepared by wet anisotropic etching.1. Introduction Micro/nanorelief metal/semiconductor (MS) interfaces are usually used for a reduction of light reflection and for increase of photocurrent of surface-barrier structures. However, the geometric disorder of such interfaces leads to the worsening of their electronic structure due to the change in their microstructure. The electrical behavior of corresponding Schottky diodes was explained by a two phase (or patch) model with different barrier heights [1]. As a result, in the diodes with rough interfaces the dominating current transport mechanism changes from thermionic emission to thermionic-field emission, the barrier height decreases and its temperature dependence increases. Often some additional treatments are used for smoothing the microrelief. In this case metal/semiconductor barrier can be modeled by a continuous set of diodes with different barrier heights connected in parallel. Several types of barrier height distribution (Gaussian type [2 -5], log-normal [6,7] or their superposition) have been proposed to describe the electrical characteristics of Schottky diodes and have been analyzed to determine the conditions of their suitability [4,7,8]. This fluctuation model with the barrier heights distributed according to Gaussian formula recently was applied successfully to explain the dark current-voltage characteristics of Au/GaAs microrelief interface, prepared by wet chemical anisotropic etching [5].In this work this fluctuation model is extended to photoelectric characteristics of such nonhomogeneous MS interfaces, which are compared with experimental results obtained on Au/GaAs Schottky barriers with dendrite-like or quasi-grating interface.

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Texturized interface as a basis of surface-barrier heterostructure for solar cells application

Cited by 19 publications

References 9 publications

Influence of correlation between interface profiles of thin absorptive films on light transmission

Influence of correlation between interface profiles of thin absorptive films on light transmission

Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface

Fluctuation model for a rough metal/semiconductor interface

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