Textured hexagonal and cubic phases of AlN films deposited on Si (100) by DC magnetron sputtering and high power impulse magnetron sputtering

Riah, B.; Ayad, A.; Camus, J.; Rammal, M.; Boukari, F.; Chekour, L.; Djouadi, M.A.; Rouag, N.

doi:10.1016/j.tsf.2018.03.076

Cited by 13 publications

(9 citation statements)

References 38 publications

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“…The shift of (0002) peak in the case of AlN deposited on Si(111), where 2θ = 36.09°, is less important compared to the film deposited on Si(100), where 2θ = 36.04°. To understand this change, XRD pole figures (0001), {101 1}, {101 2} and {101 3} of hexagonal AlN were obtained [26], but only the pole figures {101 1} and {101 2} are used in this study. The {101 1} pole figures of AlN/Si(100), AlN/Si(111), and AlN/AlN MBE/Si (111) films are shown in Figure 3a-c, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The crystal structures of AlN films were investigated by X-ray diffraction (XRD) using a PANanalytical Empyrean ® X-ray diffractometer (Malvern Panalytical, Malvern, UK), with Cu Kα radiation (λ = 0.154 nm), voltage and current (40 kV-40 mA), respectively, as described early by B. Riah et al [26]. In addition, The reflection spectra of the respective molecular structure for the prepared AlN films were identified, studied and presented using Raman spectrometer (Horiba Jobin-Yvon lab-RamT64000 ® , Horiba, Kyoto, Japan), in backscattering z(x, unpolarised)z, configuration, with z orthogonal to the substrate surface and utilizing the 514 nm lines of a (Cd-He) green laser as the excitation source at room temperature.…”

Section: Methodsmentioning

confidence: 99%

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Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

et al. 2021

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This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

et al. 2021

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“…This can be explained by the lattice mismatch between AlN and Si (100), which is much higher than that with Si (111); thus, the AlN film growth is easier on Si (111). It can be seen that almost 0% mismatch exist between AlN and AlN buffer layer /Si (111), 19% between AlN and Si (111) substrate and 43% in the case of AlN film and Si (100) substrate [16][17][18].…”

Section: Resultsmentioning

confidence: 99%

“…The reactive N2 gas was fixed at 55%.The structural characterization of AlN films was performed by X-ray diffraction (XRD) using a PANanalytical Empyrean ® X-ray diffractometer, with Cu Kα radiation (λ = 0.154 nm), voltage and current (40 kV -40 mA), respectively. For more details check [16]. In addition, Raman spectroscopy was used in order to obtain the quality of the deposited films and calculate the residual stress which has been developed after deposition.…”

Section: Methodsmentioning

confidence: 99%

Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

Riah¹,

Camus²,

Ayad³

et al. 2021

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This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

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“…Torino et al [42] reported a transition from (101) to (002) preferred orientation for AlN films with decreasing (Ar + N 2 ) working pressure in the chamber. The presence of (002) orientation means that the AlN crystallites are highly oriented with the c-axis perpendicular to the substrate surface [43,44].…”

Section: Resultsmentioning

confidence: 99%

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

et al. 2020

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In the present work, the structure, stress state and phase composition of MeN/SiNx (Me = Zr, Cr, Al) multilayered films with the thickness of elementary layers in nanoscale range, as well as their stability to high temperature oxidation, were studied. Monolithic (reference) and multilayered films were deposited on Si substrates at the temperatures of 300 °C (ZrN/SiNx and AlN/SiNx systems) or 450 °C (CrN/SiNx) by reactive magnetron sputtering. The thickness ratios of MeN to SiNx were 5 nm/2 nm, 5 nm/5 nm, 5 nm/10 nm and 2 nm/5 nm. Transmission electron microscopy (TEM), X-ray Reflectivity (XRR) and X-ray Diffraction (XRD) testified to the uniform alternation of MeN and SiNx layers with sharp interlayer boundaries. It was observed that MeN sublayers have a nanocrystalline structure with (001) preferred orientation at 5 nm, but are X-ray amorphous at 2 nm, while SiNx sublayers are always X-ray amorphous. The stability of the coatings to oxidation was investigated by in situ XRD analysis (at the temperature range of 400–950 °C) along with the methods of wavelength-dispersive X-ray spectroscopy (WDS) and scanning electron microscopy (SEM) after air annealing procedure. Reference ZrN and CrN films started to oxidize at the temperatures of 550 and 700 °C, respectively, while the AlN reference film was thermally stable up to 950 °C. Compared to reference monolithic films, MeN/SiNx multilayers have an improved oxidation resistance (onset of oxidation is shifted by more than 200 °C), and the performance is enhanced with increasing fraction of SiNx layer thickness. Overall, CrN/SiNx and AlN/SiNx multilayered films are characterized by noticeably higher resistance to oxidation as compared to ZrN/SiNx multilayers, the best performance being obtained for CrN/SiNx and AlN/SiNx with 5 nm/5 nm and 5 nm/10 nm periods, which remain stable at least up to 950 °C.

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Textured hexagonal and cubic phases of AlN films deposited on Si (100) by DC magnetron sputtering and high power impulse magnetron sputtering

Cited by 13 publications

References 38 publications

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

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