Texture of Al films for wafer-level thermocompression bonding

Malik, Nishant; Dall, Wilhelm; Schjølberg-Henriksen, Kari; Poppe, Erik; Taklo, Maaike M. Visser; Finstad, T. G.

doi:10.1016/j.spmi.2017.03.053

Cited by 4 publications

(3 citation statements)

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“…According to previous electron backscattered diffraction (EBSD) studies reported by Malik et al, 21 the Al films deposited on Si (001) exhibit an average grain size (d) and distribution width (±) similar to that of films deposited on amorphous SiO2, respectively, 0.9 ± 1.5 and 0.9 ± 1.6 µm, although a significantly stronger (111) µm, respectively). While grain growth is expected to be affected by the applied pressure, the larger grain size of Al here in the Ox400 sample compared to the Si400 one ( Fig.…”

Section: Discussionmentioning

confidence: 68%

“…The maximum gap height is much larger than the as-deposited roughness of Al films on Si or SiO2 (<5 nm). 21 It is also much larger than the roughness of films deposited with identical parameters as here and annealed to 400 °C. 21 Thus the initial film roughness is not responsible for the observed behavior, however, Al films develop hillocks when annealed in mechanically unconstrained conditions.…”

Section: Discussionmentioning

confidence: 80%

“…21 It is also much larger than the roughness of films deposited with identical parameters as here and annealed to 400 °C. 21 Thus the initial film roughness is not responsible for the observed behavior, however, Al films develop hillocks when annealed in mechanically unconstrained conditions. 22 In the present case the bonded wafers were pressed against each other with a force of 1 kN during heating.…”

Section: Discussionmentioning

confidence: 80%

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Interfacial characterization of Al-Al thermocompression bonds

Malik

Carvalho

Poppe

et al. 2016

Journal of Applied Physics

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Interfaces formed by Al-Al thermocompression bonding were studied by transmission electron microscopy. Si wafer pairs were bonded using Al films deposited on Si or SiO2 as intermediate bonding media. A bond force of 36 or 60 kN at bonding temperatures ranging from 400-550 °C was applied for a duration of 60 min. Differences in bonded interfaces of 200 µm wide sealing frames were investigated. Interface having voids was observed for bonding with 36 kN at 400 °C for Al deposited both on Si and on SiO2. However, the dicing yield was 33 % for Al on Si and 98 % for Al on SiO2, attesting for the higher quality of the latter bonds. Both a bond force of 60 kN applied at 400 °C and a bond force of 36 kN applied at 550 °C resulted in completely bonded frames with dicing yields of, respectively, 100 and 96 %. A high density of long dislocations in the Al grains was observed for the 60 kN case, while the higher temperature resulted in grain boundary rotation away from the original Al-Al interface towards more stable configurations.Possible bonding mechanisms and reasons for the large difference in bonding quality of the Al films deposited on Si or SiO2 are discussed.3

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Section: Discussionmentioning

confidence: 68%

Section: Discussionmentioning

confidence: 80%