Texture development of non-epitaxial polycrystalline ZnO films

Kajikawa, Yuya

doi:10.1016/j.jcrysgro.2005.11.089

Cited by 137 publications

(101 citation statements)

References 104 publications

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“…The above findings are of no surprise since the columnar structure of ZnO possess significantly smaller cystallographic features (e.g., smaller grain size and columnar width) and a lower texture degree closer to the underlying substrate as a consequence of limited growth dynamics at temperatures far from thermal equilibrium [4], [5]. In consequence, thinner films are expected to feature a higher amount of lattice defects such as open columnar boundaries also at the layer's surface.…”

Section: B Dry Heat Ageingmentioning

confidence: 91%

Environmental stability of highly conductive nominally undoped ZnO layers

Hála

Inoue

Kato

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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Abstract-Highly conductive nominally undoped ZnO (b-ZnO) films represent an attractive alternative for ZnO:Al windows employed in thin film solar cells. In order to assess their suitability for the PV industry, we examine here their stability in various environments. We show that the b-ZnO films can exhibit comparable stability to ZnO:Al films in both ambient and heated air. However, b-ZnO films degrade faster in accelerated open damp heat (DH) conditions, which can be related to their columnar microstructure. Finally, a b-ZnO multilayer coating with an improved environmental stability is presented.

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Section: B Dry Heat Ageingmentioning

confidence: 91%

Environmental stability of highly conductive nominally undoped ZnO layers

Hála

Inoue

Kato

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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“…The ͑0002͒ plane in hexagonal systems is usually considered to possess the lowest surface energy, 33 ͑0002͒ plane has been reported as the lowest surface energy plane. Thus assuming that in GaN also, ͑0002͒ plane is the lowest surface energy plane, ͑0002͒ preferred orientation in thinner GaN films can be attributed to preferential nucleation, which is known 33,38,39 to be driven by minimization of the surface energy. However, the main issue to be addressed is the occurrence of different preferred orientations in thicker GaN films deposited below and above 500°C.…”

Section: -3mentioning

confidence: 99%

Growth and structure of sputtered gallium nitride films

Yadav¹,

Major²,

Srinivasa³

2007

Journal of Applied Physics

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GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300°C are amorphous and As rich. Above 300°C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700°C, GaN films, practically free of amorphous phase, and As (<0.5at.%) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500°C, the surface diffusion between planes dominates and results in the (101¯1) preferred orientation. Above 500°C, the surface diffusion between grains takes over and results in (0002) preferred orientation.

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“…The surface morphology of a thin film may indicate its dynamic growth [13][14][15] . Typically, growth of a thin film is a non-equilibrium process, which can lead to the formation of a roughened surface with granular or pyramidal structures 4,13,15 .…”

Section: Introductionmentioning

confidence: 99%