Tetrahedral amorphous carbon resistive memories with graphene-based electrodes

Ott, A. K.; Dou, Chunmeng; Sassi, Ugo; Goykhman, Ilya; Yoon, Duhee; Wu, Jielong; Lombardo, Antonio; Ferrari, Andrea C.

doi:10.1088/2053-1583/aad64b

Cited by 11 publications

(12 citation statements)

References 78 publications

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“…The presence of multiple resistive states was reported by Ref. [308] . Multilevel storage is of particular interest as it allows to store more than one bit per cell, while the memristive behaviour can be exploited to provide a range of signal processing/computing-type operations, such as implementing logic, providing synaptic and neuron-like mimics, i.e.…”

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 56%

“…[294] RS in amorphous carbons with different sp²/sp³ ratio was reported by several groups. [285,[304][305][306][307][308][309][310][311][312] RS in sp² rich a-C was studied in a Si/TiN/a-C devices, using a CAFM as top contact. [282] The key parameters of RS devices based on pure amorphous carbon are reported in Table 9.…”

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

“…The issue of a low ION/IOFF can be overcome by using ta-C. Ref. [308] demonstrated high ION/IOFF in Pt/ta-C/(SLG)/Au devices. Devices with an interfacial SLG reached ION/IOFF~4x10 5 , while maintaining low switching power density of 14µW/µm 2 .…”

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

“…Devices with an interfacial SLG reached ION/IOFF~4x10 5 , while maintaining low switching power density of 14µW/µm 2 . [308] This was attributed to the reduction of leakage currents due to the low SLG density of states near the Dirac point. [308] Refs.…”

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

“…[308] This was attributed to the reduction of leakage currents due to the low SLG density of states near the Dirac point. [308] Refs. [288][289] explained the switching in terms of nanoscale sp 2 filament formation and rupture through field-induced dielectric breakdown and thermal fuse effect, i.e.…”

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

See 4 more Smart Citations

Graphene and Related Materials for Resistive Random Access Memories

Hui

Grustan‐Gutierrez

Long

et al. 2017

Adv Elect Materials

193

191

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Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAM). Here, we analyze, classify and evaluate this emerging field, and summarize the performance of the RRAM prototypes using GRMs. Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media, in which the switching can be governed either by the migration of intrinsic species or penetration of metallic ions from adjacent layers.Graphene can be used as electrode to provide flexibility and transparency, as well as an interface layer between the electrode and dielectric to block atomic diffusion, reduce power consumption, suppress surface effects, limit the number of conductive filaments in the dielectric, and improve device integration. GRMs-based RRAMs fit some non-2 volatile memory technological requirements like low operating voltages <1V and switching times <10 ns but others, like retention >10 years, endurance >10 9 cycles and power consumption ~10 pJ/transition still remain a challenge. More technologyoriented studies including reliability and variability analyses may lead to the development of GRMs-based RRAMs with realistic possibilities of commercialization. List of acronymsa-C amorphous-Carbon ALD Atomic Layer Deposition APTES 3-Aminopropyltriethoxysilane BD Dielectric Breakdown BLG Bilayer Graphene BP Black Phosphorous CAFM Conductive Atomic Force Microscopy CBRAM Conductive Bridge Random Access Memory CF Conductive Filament CL Current Limitation CMOS Complementary Metal Oxide Semiconductor CVD Chemical Vapor Deposition CVS Constant Voltage Stresses

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Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 56%

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

See 3 more Smart Citations

Graphene and Related Materials for Resistive Random Access Memories

Hui

Grustan‐Gutierrez

Long

et al. 2017

Adv Elect Materials

193

191

View full text Add to dashboard Cite

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Resistive Switching Crossbar Arrays Based on Layered Materials

et al. 2023

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Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm−2) and this can be further enhanced by stacking them three‐dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase‐change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures‐of‐merit and procedures to implement LM‐based RS devices are defined. LM‐based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.

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Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes

Hyeon

Jang

Min

et al. 2021

Adv Elect Materials

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To further ensure such features, substantial efforts have been dedicated toward developing a suitable candidate for data storage media. [7][8][9] In recent years, carbon-based media has shown great potential as a reliable option owing to its low cost, simple chemical composition, affordable compatibility with complementary metal-oxidesemiconductor processes, and fast switching speed. [10][11][12][13] Thus, numerous studies have also been conducted to attain a firm understanding of the nature and to achieve improved device performance.To date, the possible underlying nature of carbon layer-based RS has been expected to the formation and rupture of existing sp 2 conductive filament (CFs) initially arising from the electroforming step: that is, the conversion between the sp 2 and sp 3 carbon complexes takes places via bias, leading to two representative RS behaviors. One class is unipolar RS frequently observed from the tetrahedral amorphous carbon (tα-C) [14,15] or diamond-like carbon (DLC) layer. [16][17][18] The corresponding unipolar RS is likely attributable to the fuse-antifuse process induced by the current-driven temperature increase. The second class is bipolar-RS, mainly observed in graphene oxides [19][20][21] or α-C:H [22] layers, where bias-dependent oxygen or hydrogen ion drift plays a crucial role in the transition between the sp 2 and sp 3 bonds through the removal or absorption of ions under bias. Recently, other promising work addressed the advancing device performance of oxygenated amorphous carbon (α-C:O x ) layers, such as the high on/off ratio and fast switching speed compared to graphene oxide. [21,23] Furthermore, this α-C:O x active layer is also expected to play a key role in providing simple wafer-scale fabrication allowing good reproducibility at room temperature, amorphous nature, high degree of tunable chemical characteristics by simply changing oxygen content, and outstanding device performance, compared with those of other resistive switching active layer. However, these α-C:O x layer-based devices exhibited higher forming voltages and insufficient stability/reliability features, even if they did possess an appreciable switching speed. [18,24] In addition, the stochastic distribution in forming voltages during consecutive sweeps led to significant variation in device performance, thus requiring high power consumption to address all individual cells. [25][26][27] Recent advances in resistive switching devices have garnered a considerable amount of interest as an alternative option for next-generation nonvolatile memories due to their distinct advantages of ultralow power consumption, fast operation, and outstanding scaling potential. Among the recently considered active media, amorphous carbon oxide (α-C:O x ) shows promise in terms of device performance, essentially due to the transition between carbon sp 2 -sp 3 complex under bias. However, widespread utilization of this media still remains a challenge due to its undesirable high forming voltage and insufficient stability issues. Her...

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Tetrahedral amorphous carbon resistive memories with graphene-based electrodes

Cited by 11 publications

References 78 publications

Graphene and Related Materials for Resistive Random Access Memories

Graphene and Related Materials for Resistive Random Access Memories

Resistive Switching Crossbar Arrays Based on Layered Materials

Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes

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