Testing for MOS IC Failure Modes

Edwards, David G.

doi:10.1109/tr.1982.5221212

Cited by 32 publications

(4 citation statements)

References 47 publications

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“…100% relative humidity). From a review of this literature, the failure modes dependent on moisture and ionic contamination are bond pad corrosion [20,[60][61][62] and MOSFET threshold voltage shifts, which may be caused by damage to the gate oxide from ionic contamination or water-enhanced charged-carrier injection [63][64][65][66].…”

Section: Current and Future Ageing Testsmentioning

confidence: 99%

Silicone encapsulation of thin-film SiO_x, SiO_xN_y and SiC for modern electronic medical implants: a comparative long-term ageing study

et al. 2021

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Objective. Ensuring the longevity of implantable devices is critical for their clinical usefulness. This is commonly achieved by hermetically sealing the sensitive electronics in a water impermeable housing, however, this method limits miniaturisation. Alternatively, silicone encapsulation has demonstrated long-term protection of implanted thick-film electronic devices. However, much of the current conformal packaging research is focused on more rigid coatings, such as parylene, liquid crystal polymers and novel inorganic layers. Here, we consider the potential of silicone to protect implants using thin-film technology with features 33 times smaller than thick-film counterparts. Approach. Aluminium interdigitated comb structures under plasma-enhanced chemical vapour deposited passivation (SiO x , SiO x N y , SiO x N y + SiC) were encapsulated in medical grade silicones, with a total of six passivation/silicone combinations. Samples were aged in phosphate-buffered saline at 67 ∘ C for up to 694 days under a continuous ±5 V biphasic waveform. Periodic electrochemical impedance spectroscopy measurements monitored for leakage currents and degradation of the metal traces. Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, focused-ion-beam and scanning-electron- microscopy were employed to determine any encapsulation material changes. Main results. No silicone delamination, passivation dissolution, or metal corrosion was observed during ageing. Impedances greater than 100 GΩ were maintained between the aluminium tracks for silicone encapsulation over SiO x N y and SiC passivations. For these samples the only observed failure mode was open-circuit wire bonds. In contrast, progressive hydration of the SiO x caused its resistance to decrease by an order of magnitude. Significance. These results demonstrate silicone encapsulation offers excellent protection to thin-film conducting tracks when combined with appropriate inorganic thin films. This conclusion corresponds to previous reliability studies of silicone encapsulation in aqueous environments, but with a larger sample size. Therefore, we believe silicone encapsulation to be a realistic means of providing long-term protection for the circuits of implanted electronic medical devices.

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Section: Current and Future Ageing Testsmentioning

confidence: 99%

Silicone encapsulation of thin-film SiO_x, SiO_xN_y and SiC for modern electronic medical implants: a comparative long-term ageing study

et al. 2021

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“…The steady-state condition (dr/dt = 0) is assumed to be reached when power dissipated in the filament is at a maximum -that is, when Rf Surface-charge spreading, largely observed in MOS and memory devices, involves the lateral spreading of ionic charge from the biased metal conductors, along the oxide layer or through moisture on the device surface [Edwards 1982, Blanks 1980, Stojadinovic 1983]. An inversion layer outside the active region of the transistor is formed due to the charge, creating a conduction path between the two diffused regions or extending the p-n junction through a high-leakage region, resulting in leakage currents between neighboring conductors.…”

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The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2

Pecht¹

1993

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“…Die Forderung der Erfassung von Leitungsunterbrechungen resultiert aus der verwendeten CMOS-Technologie, bei der diese Fehlerart eine große Rolle spielt[8,9]. Die Gesamtschaltung wurde als CMOS-Gate Array unter Verwendung von 940 Makrozellen bzw.…”

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Einsatz von Testwerkzeugen - Erfahrungen mit einer kundenspezifischen Schaltung

Geisselhardt¹,

Hunger²,

Kaibel³

1987

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Übersicht:Der Beitrag berichtet über die Erfahrungen bei der Testgenerierung für eine kundenspezifische Schaltung. Lösungswege Air eine strukturorientierte Testgenerierung werden aufgezeigt sowie die damit jeweils verbundenen Probleme, die schließlich ein funktionsorientiertes Vorgehen erzwangen. Die dabei erzielten Ergebnisse sind dargestellt und belegen den Erfolg.Abstract: In this paper, experiences gained from test generation for a custom 1C are reported. Potential solutions for a structure oriented test generation are pointed out as well as the respective problems which finally forced a functional approach the results of which are depicted showing the succussful solution of the problem.Für die Dokumentation: Kundenspezifische Schaltungen / Integrierte Testwerkzeuge / Testgenerierung / Fchlersimulation

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Testing for MOS IC Failure Modes

Cited by 32 publications

References 47 publications

Silicone encapsulation of thin-film SiO_x, SiO_xN_y and SiC for modern electronic medical implants: a comparative long-term ageing study

Silicone encapsulation of thin-film SiO_x, SiO_xN_y and SiC for modern electronic medical implants: a comparative long-term ageing study

The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2

Einsatz von Testwerkzeugen - Erfahrungen mit einer kundenspezifischen Schaltung

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Testing for MOS IC Failure Modes

Cited by 32 publications

References 47 publications

Silicone encapsulation of thin-film SiO x , SiO x N y and SiC for modern electronic medical implants: a comparative long-term ageing study

Silicone encapsulation of thin-film SiO x , SiO x N y and SiC for modern electronic medical implants: a comparative long-term ageing study

The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2

Einsatz von Testwerkzeugen - Erfahrungen mit einer kundenspezifischen Schaltung

Contact Info

Product

Resources

About

Silicone encapsulation of thin-film SiO_x, SiO_xN_y and SiC for modern electronic medical implants: a comparative long-term ageing study

Silicone encapsulation of thin-film SiO_x, SiO_xN_y and SiC for modern electronic medical implants: a comparative long-term ageing study