Testing a fiber-optic ionizing-radiation detector

Bondarenko, A. V.; Dyad'kin, A P; Kashchuk, Yu. A.; Krasilnikov, A.; Олейников, А. А.; Tsutskikh, A. Yu.; Shevchenko, V. G.; Yartsev, V P

doi:10.1134/s0020441206020059

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…A silicon photomultiplier is a pixelated avalanche photodiode operated in the Geiger mode [1][2][3]. A photon impinging on the surface triggers a Geiger-Müller avalanche with well-defined probability that depends on three factors: the wavelength-dependent quantum efficiency of the pixel, the geometric efficiency of the SiPM layout and the probability that an absorbed photon triggers a Geiger-Müller avalanche.…”

Section: Properties Of the Photodetectorsmentioning

confidence: 99%

“…The gain of silicon photomultipliers (SiPMs) [1][2][3]1 depends on temperature (T) and on the overvoltage ∆V b = V b −V break where V b is the bias voltage and V break is the break-down voltage. Typically, the gain increases nearly linearly with ∆V b or V b and decreases nearly linearly with T. For stable operation the gain needs to be kept constant, especially in large detector systems such as an analog hadron calorimeter [4] planned for an ILC detector, operating with O(10 6 ) SiPMs [5].…”

Section: Introductionmentioning

confidence: 99%

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Gain stabilization of SiPMs with an adaptive power supply

et al. 2019

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A: The gain of silicon photomultipliers (SiPMs) increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept with 30 SiPMs from three manufacturers (Hamamatsu, KETEK and CPTA) operating in a climate chamber at CERN by varying temperatures between 1 • C and 48 • C. We built an adaptive power supply that uses a linear dependence of the bias voltage on temperature. We stabilized four SiPMs simultaneously with only one compensation parameter for the readjustment of the bias voltage of four SiPMs. For all tested Hamamatsu and CPTA SiPMs we achieved our goal of limiting gain changes to less than ±0.5% in the 20 − 30 • C temperature range. K : Only keywords from JINST's keywords list please A X P : 1902.06261 D Temperature Dependence of the Bias Voltage for quadratic dG/dV b and dG/dT 33 E Gain Stabilization of SiPMs with the First Gain Fit Model 33 -1 -

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Section: Properties Of the Photodetectorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Gain stabilization of SiPMs with an adaptive power supply

et al. 2019

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“…It consists of a 30-layer steel plate scintillator tile array [1]. The scintillator tiles are read out with SiPMs [2,3,4] whose gain depends on both bias voltage (V ) and on temperature (T ). With increasing temperature, the gain decreases while with increasing bias voltage the gain increases.…”

Section: Introductionmentioning

confidence: 99%

Gain stabilization of SiPMs

Cvach

Eigen

Kvasnička

et al. 2014

2014 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

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The gain of SiPMs depends both on bias voltage and on temperature. For stable operations, both need to be kept constant. In an ILC calorimeter with millions of channels, this is a challenging task. It is, therefore, desirable to compensate for temperature variations by automatically readjusting the bias voltage. We have designed a bias voltage regulator board to achieve this task. We anticipate an uncertainty on the gain stability at the level of < 1%. First, we present measurements of the gain dependence on temperature and bias voltage for several SiPMs from three different manufacturers and determine their dV/dT dependence. Next, we demonstrate the performance of the gain stability with the bias voltage regulator test board on four SiPMs.

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