Test objects with right-angled and trapezoidal profiles of the relief elements

Abstract

Comparison is made for parameters and properties of test objects based on the relief structures with right-angled and trapezoidal profiles, which are used for calibration of scanning electron microscopes (SEMs) and atomic force microscopes (AFMs). Methods of calibration of SEMs and AFMs with help of this test objects are presented. Comparative analysis has shown that trapezoidal structures with large angles of sidewall inclination, created by anisotropic etching of silicon with the (100) orientation of its surface, possess the most universal characteristics. Such structures could be used for development of internationally recognized measures of length in the nanometer range for calibration of SEMs and AFMs.

Mechanisms of image formation in SEM

“…(2) and (2) calculated with the help of formula (3) Fig. 6 shows the signal profile (1) calculated with help formula (2). One can see that the experimental signal profile (2) (Fig.…”

“…While upper and down trapezoid bases are coincided with the {100} planes, the trapezoid slopes are coincided with the {111} planes. The test object details are presented in [1,2].…”

“…Firstly, calibration of SEM [1,3] is carried out by means of trapezoidal structures with large angle slopes [1,2]. Secondly, relief structures in modern nanoelectronics have trapezoidal profile as a rule and measurements of their linear sizes are carried out generally by SEM.…”

“…A test object analogous to standard MShPS-2.0K [1,2] was used for the investigations. It is a pitch structure set with 11 trapezoidal grooves having large slope angles.…”

“…Special micro-and nanorelief test objects [1,2] were fabricated and calibration methods [1,3] for low and high voltage SEM, working in the mode of SSE registration, were developed for it. However, SEM images formed in any of these modes do not represent relief structure correctly.…”