Ternary and quaternary chalcogenides of Group IB elements

Стародуб, В. А.

doi:10.1070/rc1999v068n10abeh000480

Cited by 29 publications

(26 citation statements)

References 126 publications

(210 reference statements)

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“…2 The crystals of TlCu 2 Se 2 (TCSe) consist of layered structures, where the Tl + ions are located above and below the layers. 3,4 The unit cell can be seen in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…3,6,7 This fact rules out the existence of two oxidation state of thallium, because electrons would then fill the conduction band and act as charge carriers. 3,6 Ohtani et al 7 investigated the electrical nature of Tl x Cu 3 -x Se 2 (x = 1.1, 1.2 and 1.25) in more detail, concluding that conduction occurs predominantly by holes, but there is also a small contribution of electrons. A substantial difference was not observed between the conductivities measured for pressed powders and for single crystals of TCSe, which is indicative of a weak anisotropy of the crystals resistance.…”

Section: Introductionmentioning

confidence: 99%

“…3,5 To account for this behavior, Brun et al 5 believed the conductivity was caused by the mixed-valence state of Tl + and Tl 3+ in the lattice. However, it was demonstrated by Hall effect that this compound shows hole conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…A substantial difference was not observed between the conductivities measured for pressed powders and for single crystals of TCSe, which is indicative of a weak anisotropy of the crystals resistance. 3,6 Indeed, the electrical and optical properties of group I-III-VI compound films are strongly related to the film growth techniques. TCSe has been prepared by heating, in sealed silica tubes in vacuum, stoichiometric amounts of TlSe, copper and selenium 3,4 or elemental mixtures at 500 o C for 7 days.…”

Section: Introductionmentioning

confidence: 99%

“…3,6 Indeed, the electrical and optical properties of group I-III-VI compound films are strongly related to the film growth techniques. TCSe has been prepared by heating, in sealed silica tubes in vacuum, stoichiometric amounts of TlSe, copper and selenium 3,4 or elemental mixtures at 500 o C for 7 days. It is then formed into a pellet, and annealed at 250 o C for 7 days, followed by slow cooling.…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

Lucas¹,

Mascaro²

2018

J. Braz. Chem. Soc.

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In spite of selenide semiconductors having a wide application area, TlCu 2 Se 2 (TCSe) is poorly studied and its synthesis by non-vacuum or thermic methodology in film form is non-existent. Generally, the main problems of applying these TCSe compounds are related to complicated single phase growth, and the great time consuming and non-scalable fabrication method. In this work, the facile, fast, scalable and new electrochemical deposition of this material was proposed as a workaround for these main problems and obtaining single phase thin film. Thus, the electrodeposited Tl x Cu 3 -x Se 2 films were characterized by scanning electron microscopy, X-ray diffraction (with Rietveld refinement) and energy dispersive X-ray spectroscopy. They showed interesting variation of composition (x =1.1, 1.2, and 1.25) and morphology as function of the electrodeposition potential, electrolytic bath temperature and thermal treatment.

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“…2 The crystals of TlCu 2 Se 2 (TCSe) consist of layered structures, where the Tl + ions are located above and below the layers. 3,4 The unit cell can be seen in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

Lucas¹,

Mascaro²

2018

J. Braz. Chem. Soc.

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Sr(Ag_1−xLi_x)₂Se₂ and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] Tunable Direct Band Gap Semiconductors

et al. 2023

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Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid-state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of twodimensional Sr(Ag 1À x Li x ) 2 Se 2 layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag 1À x Li x ) 2 Se 2 with x up to 0.45. In addition, a new type of intergrowth compound [Sr 3 Se 2 ][(Ag 1À x Li x ) 2 Se 2 ] was synthesized upon further reaction of Sr-(Ag 1À x Li x ) 2 Se 2 with SrSe. Both Sr(Ag 1À x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1À x Li x ) 2 Se 2 ] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag 1À x Li x ) 2 Se 2 can be precisely tuned via fine-tuning x that is controlled by only the flux ratio and temperature.

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Sr(Ag_1−xLi_x)₂Se₂ and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] Tunable Direct Band Gap Semiconductors

et al. 2023

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Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag1−xLix)2Se2 layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag1−xLix)2Se2 with x up to 0.45. In addition, a new type of intergrowth compound [Sr3Se2][(Ag1−xLix)2Se2] was synthesized upon further reaction of Sr(Ag1−xLix)2Se2 with SrSe. Both Sr(Ag1−xLix)2Se2 and [Sr3Se2][(Ag1−xLix)2Se2] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag1−xLix)2Se2 can be precisely tuned via fine‐tuning x that is controlled by only the flux ratio and temperature.

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Ternary and quaternary chalcogenides of Group IB elements

Cited by 29 publications

References 126 publications

Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

Sr(Ag_1−xLi_x)₂Se₂ and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] Tunable Direct Band Gap Semiconductors

Sr(Ag_1−xLi_x)₂Se₂ and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] Tunable Direct Band Gap Semiconductors

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Ternary and quaternary chalcogenides of Group IB elements

Cited by 29 publications

References 126 publications

Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

Sr(Ag1−xLix)2Se2 and [Sr3Se2][(Ag1−xLix)2Se2] Tunable Direct Band Gap Semiconductors

Sr(Ag1−xLix)2Se2 and [Sr3Se2][(Ag1−xLix)2Se2] Tunable Direct Band Gap Semiconductors

Contact Info

Product

Resources

About

Sr(Ag_1−xLi_x)₂Se₂ and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] Tunable Direct Band Gap Semiconductors

Sr(Ag_1−xLi_x)₂Se₂ and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] Tunable Direct Band Gap Semiconductors