Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires

Cerofolini, G. F.; Ferri, M.; Romano, E.; Suriano, Francesco; Veronese, Giulio Paolo; Solmi, S.; Narducci, Dario

doi:10.1088/0268-1242/25/9/095011

Cited by 13 publications

(10 citation statements)

References 29 publications

(44 reference statements)

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“…This paper is a follow-up of a previous one published in this journal [6]; with respect to it, while confirming the reproducibility of the process in three consecutive successful runs, here we (a) provide a detailed electrical characterization of the bottom wire array, (b) demonstrate the scalability of the process to horizontal separations between NWs on the deep-submicrometre length scale, and (c) discuss in detail the ultimate density limit determining the best deposition conditions. Still unanswered remains the question of the demultiplexing the vertical NW arrays.…”

Section: Introductionmentioning

confidence: 75%

“…Poly-Si NWs can be arranged in vertical arrays with pitch around 50 nm via controlled etching and filling of the recessed regions (CEFRR) unavoidably resulting from conventional IC processing [23] and the vertical arrays can be arranged in the plane via lithographic methods. The CEFRR technique was proposed in [6] and is sketched in figure 1. Let N denote the number of equivalent bilayers forming the multilayered film.…”

Section: Vertical Organization Of the Nw Arraymentioning

confidence: 99%

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Crossbar architecture for tera-scale integration

Cerofolini

Ferri²,

Romano

et al. 2011

Semicond. Sci. Technol.

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As far as the fabrication of ultradense crossbars is related to correspondingly dense wire arrays, the crossbar route to tera-scale integration depends on the availability of preparation techniques for wire arrays with density of 10 6 cm −1 or more. For a planar arrangement this density implies a pitch of 10 nm or less, beyond the current possibility and close to the theoretical limit, assuming for the cross-point a minimum area of 10 nm 2 . Further increase of density can only be achieved organizing the nanowires in a three-dimensional fashion. This paper describes a planar top-down process for the preparation of vertically arranged poly-silicon nanowires. The technique is expected to allow the production of wire arrays with linear density (projected on the surface) larger than those achievable with any other proposed top-down processes. Used for the fabrication of the bottom wire array of crossbars, this process should allow an eventual cross-point density of the order of 10 12 cm −2 , thus being a candidate technology for tera-scale integration.

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Section: Introductionmentioning

confidence: 75%

Section: Vertical Organization Of the Nw Arraymentioning

confidence: 99%

Crossbar architecture for tera-scale integration

Cerofolini

Ferri²,

Romano

et al. 2011

Semicond. Sci. Technol.

Self Cite

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“…Therefore, it is of great importance to develop versatile 3D fabrication techniques that are able to form 3D architectures using parallel wafer-scale microand nanomachining. Cerofolini et al 4,5 reported the realization of repeated structures on top of a Si wafer. However, this technique requires the deposition of as many alternating layers as the number of repetitions required.…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography

Berenschot

Westerik

et al. 2020

Microsyst Nanoeng

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The current progress of system miniaturization relies extensively on the development of 3D machining techniques to increase the areal structure density. In this work, a wafer-scale out-of-plane 3D silicon (Si) shaping technology is reported, which combines a multistep plasma etching process with corner lithography. The multistep plasma etching procedure results in high aspect ratio structures with stacked semicircles etched deep into the sidewall and thereby introduces corners with a proper geometry for the subsequent corner lithography. Due to the geometrical contrast between the gaps and sidewall, residues are left only inside the gaps and form an inversion mask inside the semicircles. Using this mask, octahedra and donuts can be etched in a repeated manner into Si over the full wafer area, which demonstrates the potential of this technology for constructing high-density 3D structures with good dimensional control in the bulk of Si wafers.

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“…Vertically-oriented nanowires (nanopillars) have proven to be relevant to applications ranging from energy conversion [1][2][3][4][5][6] to biosensing [7,8] and optoelectronics [9]. Their production however still involves techniques such as nanopositioning [10], deep-UV and electron lithography [11], or multispace patterning [12,13] that are not applicable to the production of nanopillar arrays over large areas. Metal-assisted chemical etching (MACE) is instead a high-throughput technique, and at the same time it is one of the few techniques enabling growth of vertical 1D structures of virtually unlimited length.…”

Section: Introductionmentioning

confidence: 99%

Strain-induced generation of silicon nanopillars

Bollani¹,

Osmond

Nicotra

et al. 2013

Nanotechnology

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Silicon metal-assisted chemical etching (MACE) is a nanostructuring technique exploiting the enhancement of the silicon etch rate at some metal-silicon interfaces. Compared to more traditional approaches, MACE is a high-throughput technique, and it is one of the few that enables the growth of vertical 1D structures of virtually unlimited length. As such, it has already found relevant technological applications in fields ranging from energy conversion to biosensing. Yet, its implementation has always required metal patterning to obtain nanopillars. Here, we report how MACE may lead to the formation of porous silicon nanopillars even in the absence of gold patterning. We show how the use of inhomogeneous yet continuous gold layers leads to the generation of a stress field causing spontaneous local delamination of the metal-and to the formation of silicon nanopillars where the metal disruption occurs. We observed the spontaneous formation of nanopillars with diameters ranging from 40 to 65 nm and heights up to 1 μm. Strain-controlled generation of nanopillars is consistent with a mechanism of silicon oxidation by hole injection through the metal layer. Spontaneous nanopillar formation could enable applications of this method to contexts where ordered distributions of nanopillars are not required, while patterning by high-resolution techniques is either impractical or unaffordable.

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Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires

Cited by 13 publications

References 29 publications

Crossbar architecture for tera-scale integration

Crossbar architecture for tera-scale integration

Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography

Strain-induced generation of silicon nanopillars

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