Terahertz Wave Generation and Detection in Double-Graphene Layered van der Waals Heterostructures *

Yadav, Dinesh Kumar; Tombet, Stephane Boubanga; Watanabe, T.; Arnold, Stevanus; Ryzhii, V.; Otsuji, T.

doi:10.1201/9780429328398-49

Cited by 7 publications

(8 citation statements)

References 1 publication

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“…The gapless energy spectrum of graphene layers (GLs) [1,2] enables their use in the interband photodetectors [3][4][5][6] (see also the review articles [7][8][9][10][11] and the references therein) and sources (for example, [11][12][13][14][15][16][17][19][20][21][22][23][24][25][26][27][28] operating in the terahertz (THz) a far-infrared (FIR) spectral ranges. In particular, the optical [12,14,[17][18][19][20][21] and lateral injection pumping of the GLs from the side nand p-contacts (i.e., from the chemically-or electricallydoped regions) [13,16,22,[24][25][26][27] can lead to the interband population inversion and negative dynamic conductivity. This can enable the THz lasing experimentally demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

et al. 2019

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We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p + PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electronhole plasma in the GL. This simplifies the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the amplification of the surface plasmon modes. The later can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for a new types of the THz sources.

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Section: Introductionmentioning

confidence: 99%

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

et al. 2019

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“…1(d). Similar G-based structures with the enhanced carrier mobility were fabricated, experimentally studied, and well documented in the literature (see, for example, [15][16][17][18][19][20][21][22][23]).…”

Section: Device Modelmentioning

confidence: 88%

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Ryzhii,

Satou

et al. 2021

Preprint

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We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n-and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p + -p-i-n-n + graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n-and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the plasma instability and the self-excitation of the plasma oscillations in the terahertz (THz) frequency range. This effect might be used for the generation of the THz radiation.

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“…Heterostructures with graphene layers (GLs) are promising building blocks for infrared and terahertz photodetectors [1-14], optical modulators [15][16][17][18], plasmonic and frequency multiplication devices [19][20][21][22][23][24][25][26][27][28], and lasers and light-emitting diodes [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44] (including those based on hybrid GL/black phosphorous devices [45,46]). The realization of the onchip monolithic nanoscale relatively simple light sources for high-bandwidth inter-and intra-chip connections is still a challenging problem [47].…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride

Ryzhii

Otsuji

Ryzhii

et al. 2020

Preprint

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We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexagonal Boron Nitride Layer (hBNL/GL/hBNL) heterostructures and analyze their dynamic response. The operation of the IDLEs is associated with the light emission of the hot two-dimensional electron-hole plasma (2DEHP) generated in the GL by both the lateral injection from the side contacts and the vertical injection through the hBNL (combined injection) heating the 2DEHP. The temporal variation of the injection current results in the variation of the carrier effective temperature and their density in the GL leading to the modulation of the output light. We determine the mechanisms limiting the IDLE efficiency and the maximum light modulation frequency. A large difference between the carrier and lattice temperatures the IDLEs with an effective heat removal enables a fairly large modulation depth at the modulation frequencies about dozen of GHz in contrast to the standard incandescent lamps. We compare the IDLEs with the combined injection under consideration and IDLEs using the carrier Joule heating by lateral current. The obtained results can be used for the IDLE optimization.

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Terahertz Wave Generation and Detection in Double-Graphene Layered van der Waals Heterostructures *

Cited by 7 publications

References 1 publication

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride

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