Terahertz Sources and Receivers for Science Applications and Test &amp; Measurement Systems

Crowe, T.W.; Hesler, Jeffrey L.; Bryerton, Eric; Retzloff, Steven A.

doi:10.1109/csics.2016.7751069

Cited by 12 publications

(6 citation statements)

References 8 publications

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“…In contrast, in the terahertz detection field, there exist devices that have demonstrated very good performance, such as planar Schottky barrier diodes (SBDs) [2]. GaAs SBD technology is the most widespread used for the fabrication of both mixers and local oscillators based on frequency multipliers for heterodyne detection in the terahertz range [3]- [5]. However, the relatively low-power level that they can handle (given by the moderately low breakdown field and thermal conductivity of GaAs) can be strongly improved by the use of the promising GaN technology.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

Orfao

Vasallo

Moro-Melgar

et al. 2020

IEEE Trans. Electron Devices

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In this article, by means of a 2-D ensemble Monte Carlo simulator, the Schottky barrier diodes (SBDs) with realistic geometries based on GaAs and GaN are studied as promising devices for increasing the high-frequency performance-and power-handling capability of frequency mixers and multipliers. The nonlinearity of the capacitance-voltage (C-V) characteristic is the most important parameter for optimizing the performance of SBDs as frequency multipliers. The small size of the diodes used for ultrahigh-frequency applications makes the value of its intrinsic capacitance to deviate from the ideal one due to fringing effects. We have observed that the value of the edge capacitance well into reverse bias does not depend on the applied voltage. We define an edge-effect parameter β, which, interestingly, is affected by the presence or absence of surface charges at the semiconductor-dielectric interface σ . Two physical models have been considered: a fixed σ related to a surface potential V s constant surface-charge model (CCM) and a self-consistent model in which the local value of σ is dynamically evaluated depending on the surrounding electron density self-consistent surface-charge model (SCCM). Using the CCM, we obtain that β depends on the depth of the depletion region W s created by the surface charges, nearly irrespectively of the epilayer doping or semiconductor type. The more realistic SCCM indicates that, at low frequencies, when the surface charges are able to follow the variations of the applied voltage, the value of β approaches the one obtained without surface charges, while the high-frequency value (the significant one) is smaller. Index Terms-Edge effects (EEs), GaAs and GaN planar Schottky barrier diodes (SBDs), Monte Carlo (MC) simulation.

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Section: Introductionmentioning

confidence: 99%

Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

Orfao

Vasallo

Moro-Melgar

et al. 2020

IEEE Trans. Electron Devices

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“…There are several ongoing efforts to build THz sources [26] and detectors [27] with different technologies. Most common instruments today are based on laser-based pulsed and continuous-wave (CW) THz generation and detection systems [28,29], and III-V semiconductor-based microwave monolithic integrated circuits (MMICs) coupled to hollow metal waveguide blocks [30]. Although both systems provide wide-band and low phase noise operation, they are often heavy, complex, and power consuming -despite amounting to a single transmitter and/or receiver.…”

Section: Introductionmentioning

confidence: 99%

Terahertz Light-Field Imaging With Silicon Technologies

Pfeiffer,

Kutaish

2024

IEEE Open J. Solid-State Circuits Soc.

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The terahertz (THz) frequency range is widely considered as the most challenging and under-developed frequency range due to the lack of technologies to effectively bridge the transition region between microwaves (below 100 GHz) and optics (above 10,000 GHz). Although THz radiation would be perfect for material identification and as a safe alternative to X-rays for producing high resolution images of the interior of opaque objects, first a fundamentally new approach is needed to establish novel devices and techniques.INDEX TERMS light-fields, plenoptic function, terahertz imaging, 3-D imaging, integrated circuits, CMOS, SiGe.

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“…Schottky barrier diodes (SBDs) have demonstrated excellent high-frequency performance which has allowed the fabrication of RF sources reaching the THz range 1 or building sensitive direct detectors of THz radiation at room temperature. 2,3 In the past few years, widebandgap semiconductors like SiC and GaN have started to be used for the fabrication of SBDs oriented to high-power applications, which have today a broad field of purposes like the production of on-board battery chargers and off-board charging stations for the electric vehicle industry, 4,5 DC/DC boost converters, DC/AC inverters for solar and renewable energy applications, 6 etc.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Orfao

Gioia

Vasallo

et al. 2022

Journal of Applied Physics

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A model to predict the ideal reverse leakage currents in Schottky barrier diodes, namely, thermionic emission and tunneling components, has been developed and tested by means of current–voltage–temperature measurements in GaN-on-SiC devices. The model addresses both current components and both forward and reverse polarities in a unified way and with the same set of parameters. The values of the main parameters (barrier height, series resistance, and ideality factor) are extracted from the fitting of the forward-bias I–V curves and then used to predict the reverse-bias behavior without any further adjustment. An excellent agreement with the I–V curves measured in the forward bias in the GaN diode under analysis has been achieved in a wide range of temperatures (275–475 K). In reverse bias, at temperatures higher than 425 K, a quasi-ideal behavior is found, but additional mechanisms (most likely trap-assisted tunneling) lead to an excess of leakage current at lower temperatures. We demonstrate the importance of the inclusion of image-charge effects in the model in order to correctly predict the values of the reverse leakage current. Relevant physical information, like the energy range at which most of the tunnel injection takes place or the distance from the interface at which tunneled electrons emerge, is also provided by the model.

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Terahertz Sources and Receivers for Science Applications and Test & Measurement Systems

Cited by 12 publications

References 8 publications

Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

Terahertz Light-Field Imaging With Silicon Technologies

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

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